USD 24.9 Bn Opportunity in the Gallium Nitride Semiconductor Device Market by 2026

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MarketsandMarkets Presents

USD 24.9 Bn Opportunity in the Gallium Nitride
Semiconductor Device Market by 2026 Gallium
Nitride Semiconductor Device Market with COVID-19
Impact Analysis by Device Type (RF, Power, Opto),
Wafer Size, Application, Vertical (Consumer and
Enterprises, Automotive, Telecommunications), and
Geography - Global Forecast to 2026 https//www.m
arketsandmarkets.com/Market-Reports/gallium-nitrid
e-gan-semiconductor-materials-devices-market-698.h
tml
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According to the new market research
report "Gallium Nitride Semiconductor Device
Market with COVID-19 Impact Analysis by Device
Type (RF, Power, Opto), Wafer Size, Application,
Vertical (Consumer and Enterprises, Automotive,
Telecommunications), and Geography - Global
Forecast to 2026", published by
MarketsandMarkets, the market is projected to
reach USD 24.9 billion by 2026, at a CAGR of 5.2
between 2021 to 2026. The global GaN
semiconductor device market will grow to USD 24.9
billion by 2026 (forecast year) from USD 19.4
billion in 2021 (estimated year), at a CAGR of
5.2 between 2021 to 2026. The key drivers
fueling the growth of this market include the
wide gap property of GaN material facilitating
innovative applications, success of GaN in RF
power electronics, and the increasing adoption of
GaN RF semiconductor devices for defense and
aerospace applications. Browse 176 market data
Tables and 55 Figures spread through 246 Pages
and in-depth TOC on "Gallium Nitride
Semiconductor Device Market with COVID-19 Impact
Analysis - Global Forecast to 2026"
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The RF semiconductor devices to register
second-highest CAGR during the forecast
period The market for GaN RF semiconductors is
expected to exhibit the second-highest CAGR
during the forecast period. Initially developed
for improvised explosive device (IED) jammers
in Iraq, GaN has emerged as the technology of
choice for all new microwave and millimeter-wave
electronics including radar, satellite,
communications, and electronic warfare. The
growing need for high power in the very high
frequency (VHF), ultrahigh-frequency (UHF), and
microwave bands has led to the demand for devices
that can supply tens to hundreds of watts at RF
frequencies up to 10 GHz and beyond. This demand
is expected to drive the future market growth of
GaN. Ask PDF Brochure https//www.marketsandmark
ets.com/pdfdownloadNew.asp?id698 The 6-inch and
above GaN wafer segment to register highest CAGR
during the forecast period The 6-inch and above
GaN wafer segment of the GaN semiconductor device
market, by wafer size, is projected to register
the higher CAGR during the forecast period.
Wafers in this size range offer manufacturers the
ability to increase productivity and produce a
large number of devices in a single batch. This,
in turn, helps to bring down the overall cost of
manufacturing 6-inch wafers making them one of
the most cost-effective GaN wafers available in
the market. This has become one of the main
reasons owing to which the companies have been
developing their semiconductor devices based on
GaN wafers of 6-inches and above in recent years.
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APAC is projected to hold the largest share of
the GaN semiconductor device market in 2026 APAC
is expected to hold the largest share of the GaN
semiconductor device market in 2026. APAC has
witnessed exponential growth in industrial
activities in terms of the number of foundries,
wafers, fabrication, assembly, testing, and
packaging facilities in Asian countries such
as China, Taiwan, and South Korea. The region is
also witnessing an increase in the manufacturing
and imports of electric vehicles along with the
growing domestic consumption of these products.
With the increase in the adoption of electric
vehicles and the establishment of charging
stations for the same in the region, the
opportunities for the GaN semiconductor device
market are expected to accelerate in the
future. Request Free Sample Pages https//www.ma
rketsandmarkets.com/requestsampleNew.asp?id698 C
ree, Inc. (US), Infineon Technologies (Germany),
Qorvo, Inc. (US), MACOM Technology Solutions
(US), NXP Semiconductors (Netherlands),
Mitsubishi Electric Corporation (Japan),
Efficient Power Conversion (EPC) Corporation
(US), GaN Systems (Canada), Nichia Corporation
(Japan), and Epistar Corporation (Taiwan) are the
key players in the global GaN semiconductor
device market. These players are increasingly
undertaking strategies such as product launches
and development, expansions, partnerships, joint
ventures, collaborations, agreements, and
acquisitions to increase their market share.
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COVID-19 Impact on the Global GaN Semiconductor
Device Market The GaN semiconductor device market
includes key companies such as Cree, Infineon
Technologies, Qorvo, MACOM, NXP Semiconductors,
Mitsubishi Electric, Efficient Power Conversion
(EPC), GaN Systems, Nichia Corporation, and
Epistar Corporation. These companies have their
manufacturing and fabrication facilities and
corporate offices spread across various countries
across Asia Pacific, Europe, and North America.
The GaN solutions manufactured by these companies
are purchased by several stakeholders for various
applications. COVID-19 not only impacted the
operations of the various GaN semiconductor
manufacturers companies but also affected the
businesses of their suppliers and distributors.
The fail in export shipments and slow domestic
demand for semiconductors in comparison to pre
COVID-19 levels is also expected to negatively
impact and slightly stagnate the demand for GaN
semiconductor devices in short term.
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