Sparameters and noise figure of a twostage LNA in SiGe BiCMOS 0'35m technology - PowerPoint PPT Presentation

1 / 16
About This Presentation
Title:

Sparameters and noise figure of a twostage LNA in SiGe BiCMOS 0'35m technology

Description:

Department for Power, Electronics and Communications Engineering, Novi Sad ... LNA simulated using the Cadence Spectre simulator ... – PowerPoint PPT presentation

Number of Views:86
Avg rating:3.0/5.0
Slides: 17
Provided by: Ale9151
Category:

less

Transcript and Presenter's Notes

Title: Sparameters and noise figure of a twostage LNA in SiGe BiCMOS 0'35m technology


1
S-parameters and noise figure of a two-stage LNA
in SiGe BiCMOS 0.35µm technology
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
  • Alena Ðugova
  • Mirjana Videnovic-Miic
  • Faculty of Technical Sciences,
  • Department for Power, Electronics and
    Communications Engineering,
  • Novi Sad

2
OVERVIEW
  • Introduction
  • LNA design consideration
  • LNA architecture
  • Simulation results
  • Conclusion

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
3
INTRODUCTION
  • LNA - the key component in a typical wireless
    receiver
  • minimum noise
  • high gain
  • low power consumption
  • good impedance matching

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
4
LNA DESIGN CONSIDERATION
  • finding the most appropriate LNA architecture
  • selection of the LNA operating frequency range
  • choosing appropriate input matching circuit in
    order to achieve maximum power transfer

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
5
LNA topologies
  • single-ended
  • higher gain in case of the same current
    consumption
  • better noise performance
  • differential-ended
  • immunity against interference
  • higher common mode rejection ratio

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
6
LNA operating frequency range
  • broadband
  • allows the LNA to be used at any frequency in its
    amplification band
  • too much expensive in term of power dissipation
  • difficult to satisfy the input impedance
    requirement in broadband realization
  • narrowband
  • provides near optimum gain and noise figure while
    providing a real input resistance
  • drawback requires the use of inductors with high
    Q inductors (difficult to achieve)

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
7
Typical LNA Input Matching Networks
  • (a) resistive termination of the input port to
    provide 50O input impedance
  • broadband input matching provides a perfect input
  • matching
  • seriously degrades the LNA NF
  • (b) the source of a common-gate MOSFET as an
    input termination
  • input impedances seen from the source is the
    inverse of the transconductance (1/gm)
  • sufficient to correctly design the MOSFET and its
    DC current to provide a good, wideband input
    matching
  • minimum NF is inversely proportional to the
    channel length
  • of the MOSFET

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
8
Typical LNA Input Matching Networks
  • (c) resistive shunt and series feedback to set
    the input and output impedances
  • have extraordinarily high power dissipation
    compared to amplifiers with similar noise
    performance (broadband)
  • requires on-chip resistors of reasonable quality
  • (generally not available in CMOS technologies)
  • (d) inductive source degeneration to generate
  • a real term in the input impedance
  • provides, at a given frequency, the correct real
    input
  • impedance without the introduction of resistors
    (RS?TLS )
  • the NF is only degraded by the parasitic
    resistances
  • associated to integrated spiral inductors LS and
    LG
  • narrowband approach

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
9
LNA ARCHITECTURE
  • two-stage narrowband LNA

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
10
SIMULATION RESULTS
  • fixed-PD noise optimization technique for
    starting simulation data D. K.Scheffer and T.
    H.Lee, A 1.5-V, 1.5-GHz CMOS low noise
    amplifier
  • operating frequency f01.57542GHz (GPS)
  • LNA simulated using the Cadence Spectre simulator
  • LNA designed in austriamicrosystems 0.35µm SiGe
    BiCMOS technology
  • components real models (austriamicrosystems) were
    used, except for Ls (too small value, not given
    by austriamicrosystems)

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
11
SIMULATION RESULTS
S11_at_1.57542GHz-36.44dB
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
12
SIMULATION RESULTS
S22_at_1.57542GHz-30.84dB
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
13
SIMULATION RESULTS
S21_at_1.57542GHz40.14dB
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
14
SIMULATION RESULTS
S12_at_1.57542GHz-58.81dB
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
15
SIMULATION RESULTS
NF_at_1.57542GHz1.386dB
1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
16
CONCLUSION
  • results satisfied general requirements
  • S11-36.44dB lt-10dB
  • S22-30.84 lt-10dB
  • S2140.14dB gt20dB
  • S12-58.81dB
  • NF1.386dB lt3dB
  • next steps
  • real model for LS
  • stability issues

1st ReCIMiCo WORKSHOP, Novi Sad 29th and 30th
September 2008
Write a Comment
User Comments (0)
About PowerShow.com