Title: Sparameters and noise figure of a twostage LNA in SiGe BiCMOS 0'35m technology
1S-parameters and noise figure of a two-stage LNA
in SiGe BiCMOS 0.35µm technology
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September 2008
- Alena Ðugova
- Mirjana Videnovic-Miic
- Faculty of Technical Sciences,
- Department for Power, Electronics and
Communications Engineering, - Novi Sad
2OVERVIEW
- Introduction
- LNA design consideration
- LNA architecture
- Simulation results
- Conclusion
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September 2008
3INTRODUCTION
- LNA - the key component in a typical wireless
receiver - minimum noise
- high gain
- low power consumption
- good impedance matching
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September 2008
4LNA DESIGN CONSIDERATION
- finding the most appropriate LNA architecture
- selection of the LNA operating frequency range
- choosing appropriate input matching circuit in
order to achieve maximum power transfer
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September 2008
5LNA topologies
- single-ended
- higher gain in case of the same current
consumption - better noise performance
- differential-ended
- immunity against interference
- higher common mode rejection ratio
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September 2008
6LNA operating frequency range
- broadband
- allows the LNA to be used at any frequency in its
amplification band - too much expensive in term of power dissipation
- difficult to satisfy the input impedance
requirement in broadband realization - narrowband
- provides near optimum gain and noise figure while
providing a real input resistance - drawback requires the use of inductors with high
Q inductors (difficult to achieve)
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September 2008
7Typical LNA Input Matching Networks
- (a) resistive termination of the input port to
provide 50O input impedance - broadband input matching provides a perfect input
- matching
- seriously degrades the LNA NF
- (b) the source of a common-gate MOSFET as an
input termination - input impedances seen from the source is the
inverse of the transconductance (1/gm) - sufficient to correctly design the MOSFET and its
DC current to provide a good, wideband input
matching - minimum NF is inversely proportional to the
channel length - of the MOSFET
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September 2008
8Typical LNA Input Matching Networks
- (c) resistive shunt and series feedback to set
the input and output impedances - have extraordinarily high power dissipation
compared to amplifiers with similar noise
performance (broadband) - requires on-chip resistors of reasonable quality
- (generally not available in CMOS technologies)
- (d) inductive source degeneration to generate
- a real term in the input impedance
- provides, at a given frequency, the correct real
input - impedance without the introduction of resistors
(RS?TLS ) - the NF is only degraded by the parasitic
resistances - associated to integrated spiral inductors LS and
LG - narrowband approach
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9LNA ARCHITECTURE
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10SIMULATION RESULTS
- fixed-PD noise optimization technique for
starting simulation data D. K.Scheffer and T.
H.Lee, A 1.5-V, 1.5-GHz CMOS low noise
amplifier - operating frequency f01.57542GHz (GPS)
- LNA simulated using the Cadence Spectre simulator
- LNA designed in austriamicrosystems 0.35µm SiGe
BiCMOS technology - components real models (austriamicrosystems) were
used, except for Ls (too small value, not given
by austriamicrosystems)
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11SIMULATION RESULTS
S11_at_1.57542GHz-36.44dB
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12SIMULATION RESULTS
S22_at_1.57542GHz-30.84dB
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13SIMULATION RESULTS
S21_at_1.57542GHz40.14dB
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14SIMULATION RESULTS
S12_at_1.57542GHz-58.81dB
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15SIMULATION RESULTS
NF_at_1.57542GHz1.386dB
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16CONCLUSION
- results satisfied general requirements
- S11-36.44dB lt-10dB
- S22-30.84 lt-10dB
- S2140.14dB gt20dB
- S12-58.81dB
- NF1.386dB lt3dB
- next steps
- real model for LS
- stability issues
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September 2008