The IRGPS4067D and IRGP4066D ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) are optimized for uninterruptible power supplies (UPS), solar inverter, industrial motor and welding applications. These IGBTs complement IR - PowerPoint PPT Presentation

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The IRGPS4067D and IRGP4066D ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) are optimized for uninterruptible power supplies (UPS), solar inverter, industrial motor and welding applications. These IGBTs complement IR

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International Rectifier s focus on power applications allows for optimization of devices to meet the technical requirements of various power systems. – PowerPoint PPT presentation

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Title: The IRGPS4067D and IRGP4066D ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) are optimized for uninterruptible power supplies (UPS), solar inverter, industrial motor and welding applications. These IGBTs complement IR


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Rugged, Reliable, Ultra-fast 600V IGBTs for UPS,
Solar, Industrial Motor and Welding Applications
PRESS RELEASE
DATA SHEET
HI-RES GRAPHIC
The IRGPS4067D and IRGP4066D ultra-fast Trench
Insulated Gate Bipolar Transistors (IGBTs) are
optimized for uninterruptible power supplies
(UPS), solar inverter, industrial motor and
welding applications. These IGBTs complement
IRs family of IGBTs for motor drive and hard
switching applications. International
Rectifiers focus on power applications allows
for optimization of devices to meet the technical
requirements of various power systems.

IGBT HOME PAGE
  • Advantages
  • The IRGPS4067DPbF and IRGP4066DPbF utilize trench
    thin wafer technology to offer lower conduction
    and switching losses.
  • The devices are co-packaged with a soft recovery
    low Qrr diode.
  • The new devices are optimized for ultra-fast
    switching (8kHz 30kHz) with 5µs short circuit
    rating and feature low VCE(on) and positive
    VCE(on) temperature coefficient for easy
    paralleling.
  • The new 600V IGBTs are suitable for a wide range
    of switching frequencies due to their low VCE(on)
    and low switching losses offering higher system
    efficiency and rugged transient performance for
    increased reliability.
  • Features
  • 75A and 120A rating for highest available power
    in standard discrete packages
  • Low VCE(on) Trench IGBT Technology
  • Low Switching Losses
  • 5µs SCSOA
  • Square RBSOA
  • 100 of the parts tested for ILM
  • Positive VCE(on) Temperature Coefficient
  • Ultra Fast Soft Recovery Co-pak Diode
  • Tighter Distribution of Parameters
  • Lead-free, RoHS Compliant

November 2011
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