Fabrication process could ... low gap cell (InN n/p junction, Eg=0.7 eV) high gap cell (In0.34Ga0.66N n/p ... for high efficiencies in one material system ...
Multijunction solar cell based on this single ternary system could have higher ... Massive span in PV energies for high efficiencies in one material system ...
... example 2D graphene McEwen & Park et al., ... quantum wires, and quantum dots reduces the set of phonon momenta and energies allowed in transitions ...
the highest elastic module, and mechanical strength that is approximately ... superconductivity. A one-size fits-all IR material. C. R. Physique 4 1155 1158 (2003) ...
Lawrence Berkeley National Laboratory, Berkeley, CA 94720. Supported by US DOE and DOD ... C-plane sapphire. InN. AlN. GaN. edge threading dislocations. Ne ~ 80% NTD ...
Single Phase Wurtzite Structure No In Clusters. g = (0002) g ... shows only the wurtzite structure. InN pattern with no evidence of. any secondary phase. ...
Importance This is the first demonstration of light emission from a single carbon nanotube p-n diode and it exhibits a narrower electroluminescent emission spectrum ...
SIMS analysis performed on a PHI TRIFT III time-of-flight mass spectrometer. ... SIMS depth profiles reveal interfacial broadening with increasing soak time ...