... (MuGFET, Ge/III-V), lithography (double pitch, EUV), and interconnect (nanoporous, air-gap) technologies being considered for these sub 32 nm technologies.
... UNGL UNGL will develop methodologies for the simulation of the statistical impact of NBTI and hot carrier degradation on the MOSFET characteristics in concert ...
Sung G. Kim. Network for Computational Nanotechnology (NCN) Sung G. Kim ... Size of device decreases (Moore's Law) number of gates increases for more efficient ...