Defect clusters affected by annealing conditions & impurities in the silicon ... Typically, test detectors after beneficial annealing, to try to find stable ...
3D Simulation and Analysis of the Radiation Tolerance of Voltage Scaled Digital Circuits Rajesh Garg Sunil P. Khatri Department of ECE Texas A&M University
... W = 2*n*h Channel width in a FinFET is quantized Width quantization is a design challenge if fine control of transistor drive strength is needed E.g., ...
Plan for D2.4.2 deliverable (M24): - TCAD reliability simulations focused on HV-CMOS. - Hot-Carrier lifetime model for HV-CMOS by modified Hu-model. ...
Novel dual-Vth independent-gate FinFET circuits Masoud Rostami and Kartik Mohanram Department of Electrical and Computer Engineering Rice University, Houston, TX
It all pales in comparison to.... Objectives. Provide device simulation environment for rad-hard applications ... P = Process / D = Device 90% code shared ...
EMTERC's goal is to continually build on its international ... DC magnetron sputterer. 3 evaporators. Dual chamber PECVD system. Langmuir Blodgett trough ...