Title: OUTLINE
1Lecture 25
- OUTLINE
- Logic functions
- NMOS logic gates
- The CMOS inverter
- The CMOS inverter (contd)
- CMOS logic gates
- Reading
- Text Chap. 7-7.5
2Logic Functions, Symbols, Notation
TRUTH NAME SYMBOL NOTATION TABLE
F A
F
A
NOT
A
F AB
F
OR
B
A
F AB
F
AND
B
3Logic Functions, Symbols, Notation 2
A
F AB
F
NOR
B
A
F AB
F
NAND
B
A
F A B
F
XOR (exclusive OR)
B
4Fan in/Fan out
- Complex digital operations are formed with a
variety of gates interconnected to yield the
desired logic function. - Sometimes a number of inputs are connected to one
gate input and output of a gate may be connected
to a number of gates. - Fan-in the maximum number of logic gates that
can be connected at the input of a gate without
altering its performance. - Fan-out the maximum number of logic gates that
can be connected to the output of a gate without
altering its performance. - Typical fan-in and fan-out numbers are 3.
5Inverter NOT Gate
Vout
Vin
Ideal Transfer Characteristics
Vout
Vin
V/2
V
6NMOS Resistor Pull-Up
Voltage-Transfer Characteristic
Circuit
vOUT
VDD
F
A
iD
vIN
0
VT
VDD
vDS
0
7Disadvantages of NMOS Logic Gates
- Large values of RD are required in order to
- achieve a low value of VOL
- keep power consumption low
- Large resistors are needed, but these take up a
lot of space. - One solution is to replace the resistor with an
NMOSFET that is always on.
8The CMOS Inverter Intuitive Perspective
CIRCUIT
SWITCH MODELS
VDD
VDD
Rp
VOUT
VOUT
VOL 0 V
VOH VDD
Rn
Low static power consumption, since one MOSFET is
always off in steady state
VIN VDD
VIN 0 V
9CMOS Inverter Voltage Transfer Characteristic
N sat P sat
VOUT
N off P lin
C
VDD
N sat P lin
B
D
E
A
N lin P sat
N lin P off
0
VIN
VDD
0
10CMOS Inverter Load-Line Analysis
VGSpVIN-VDD
VIN VDD VGSp
VDSpVOUT-VDD
VOUT VDD VDSp
IDn-IDp
IDn-IDp
VIN 0 V
VIN VDD
increasing VIN
VOUTVDSn
0
VDD
0
11CMOS Inverter Load-Line Analysis Region A
VGSpVIN-VDD
VIN ? VTn
VDSpVOUT-VDD
IDn-IDp
IDn-IDp
VOUTVDSn
0
VDD
0
12CMOS Inverter Load-Line Analysis Region B
VGSpVIN-VDD
VDD/2 gt VIN gt VTn
VDSpVOUT-VDD
IDn-IDp
IDn-IDp
VOUTVDSn
0
VDD
0
13CMOS Inverter Load-Line Analysis Region D
VGSpVIN-VDD
VDD VTp gt VIN gt VDD/2
VDSpVOUT-VDD
IDn-IDp
IDn-IDp
VOUTVDSn
0
VDD
0
14CMOS Inverter Load-Line Analysis Region E
VGSpVIN-VDD
VIN gt VDD VTp
VDSpVOUT-VDD
IDn-IDp
IDn-IDp
VOUTVDSn
0
VDD
0
15Features of CMOS Digital Circuits
- The output is always connected to VDD or GND in
steady state - Full logic swing large noise margins
- Logic levels are not dependent upon the relative
sizes of the devices (ratioless) - There is no direct path between VDD and GND in
steady state - no static power dissipation
16The CMOS Inverter Current Flow during Switching
N sat P sat
VOUT
N off P lin
C
V
DD
VDD
S
G
N sat P lin
D
VOUT
VIN
B
D
E
A
D
N lin P sat
G
S
N lin P off
0
VIN
VDD
0
17Power Dissipation due to Direct-Path Current
VDD
V
DD
vIN
S
G
0
D
i
vOUT
vIN
D
G
i
S
time
18NMOS NAND Gate
- Output is low only if both inputs are high
VDD
RD
F
A
Truth Table
B
19NMOS NOR Gate
- Output is low if either input is high
VDD
RD
F
A
B
Truth Table
20N-Channel MOSFET Operation
An NMOSFET is a closed switch when the input is
high
A
B
A
B
Y
Y
X
X
Y X if A and B
Y X if A or B
NMOSFETs pass a strong 0 but a weak 1
21P-Channel MOSFET Operation
A PMOSFET is a closed switch when the input is low
A
B
A
B
Y
Y
X
X
Y X if A and B (A B)
Y X if A or B (AB)
PMOSFETs pass a strong 1 but a weak 0
22Pull-Down and Pull-Up Devices
- In CMOS logic gates, NMOSFETs are used to connect
the output to GND, whereas PMOSFETs are used to
connect the output to VDD. - An NMOSFET functions as a pull-down device when
it is turned on (gate voltage VDD) - A PMOSFET functions as a pull-up device when it
is turned on (gate voltage GND)
VDD
A1 A2 AN
Pull-up network
PMOSFETs only
input signals
F(A1, A2, , AN)
A1 A2 AN
Pull-down network
NMOSFETs only
23CMOS NAND Gate
VDD
A
B
F
A
B
24CMOS NOR Gate
VDD
A
B
F
A
B
25CMOS Pass Gate
A
Y
Y X if A
X
A