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High Power Converters and Applications

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Active Overvoltage Clamping (AOC) Assumption: S1 is turned off earlier than S2 ... active clamping. Suitable for series IGBTs. Not applicable to GCTs. Device ... – PowerPoint PPT presentation

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Title: High Power Converters and Applications


1
Power Converter Systems Graduate Course EE8407
Bin Wu PhD, PEng Professor ELCE
Department Ryerson University Contact Info
Office ENG328 Tel (416) 979-5000 ext
6484 Email bwu_at_ee.ryerson.ca http//www.ee.ryers
on.ca/bwu/
Ryerson Campus
2
Topic 2 High-Power Semiconductor Devices
3
High-Power Semiconductor Devices
Lecture Topics
  • Power Diode
  • SCR Thyristor
  • Gate Turn-Off Thyristor (GTO)
  • Integrated Gate Commutated Thyristor (GCT)
  • Insulated Gate Bipolar Transistor (IGBT)
  • Switch Series Operation

4
High-Power Semiconductor Devices
  • Device Rating

5
Power Diode
4500V/800A press pack and 1700V/1200A module
diodes
6
Power Diode
  • Heatsink Assembly
  • Press pack device
  • Double sided cooling
  • Low assembly cost and high power density
  • Preferred choice for high voltage high power
    applications

7
SCR Thyristor
4500V/800A and 4500V/1500A SCRs
8
SCR Thyristor
  • Switching Characteristics

9
SCR Thyristor
  • Main Specifications

12000V/1500A SCR Thyristor
10
Gate Turn-Off (GTO) Thyristor
4500V/800A and 4500V/1500A GTOs
11
Gate Turn-Off (GTO) Thyristor
  • Symmetrical versus Asymmetrical GTOs

12
Gate Turn-Off (GTO) Thyristor
  • Switching Characteristics

13
Gate Turn-Off (GTO) Thyristor
  • Main Specifications

4500V/4000A Asymmetrical GTO Thyristor
14
Integrated Gate Commutated Thyristor (GCT)
6500V/1500A Symmetrical GCT
GCT Improved GTO Integrated Gate
Anti-parallel Diode (optional)
15
Integrated Gate Commutated Thyristor
  • GCT Classifications

16
Integrated Gate Commutated Thyristor
  • Switching Characteristics

17
Integrated Gate Commutated Thyristor
  • Main Specifications

6000V/6000A Asymmetrical GCT
18
Insulated Gate Bipolar Transistor (IGBT)
1700V/1200A and 3300V/1200A IGBT modules
19
Insulated Gate Bipolar Transistor (IGBT)
  • IGBT Characteristics

Static V-I Characteristics
Switching characteristics
20
Insulated Gate Bipolar Transistor (IGBT)
  • Main Specifications

3300V/1200A IGBT
21
Device Series Operation
  • Cause of Voltage Imbalance

22
Device Series Operation
  • Equal Voltage Sharing
  • S1, S2, S3
  • GTO, GCT or IGBT
  • Voltage Sharing
  • v1 v2 v3 in steady state
  • and transients
  • Static Voltage Sharing
  • Rv
  • Dynamic Voltage Sharing
  • Rs and Cs

23
Device Series Operation
  • Active Overvoltage Clamping (AOC)
  • Suitable for series IGBTs
  • Not applicable to GCTs
  • Assumption
  • S1 is turned off earlier than S2
  • VCE1 is clamed to Vm due to
  • active clamping.

24
Summary
25
Thanks
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