Defect Reduction Technology Program

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ITRS 2000 Conference Dec. 6th, 2000 Hsinchu,
Taiwan, R.O.C. Defect Reduction Cross-Cut
Technology Working Group2000 Updates
Toshihiko Osada Fujitsu, Japan
Milton Godwin Applied Materials, US

Chris Long IBM , US
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Outline

• Yield Cycle
• 2001 ITRS DR ITWG Co-chairs
• 2000 Soft Table Updates
• 2001 Challenges

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Defect Reduction TWG Yield Learning Cycle
Focus Topics
Yield Model and Defect Budget
Defect Detection
Defect Sources and Mechanisms
Defect Prevention and Elimination
Process to Process Interactions
Design to Process Interactions
Process Materials
Process Equipment
Wafer/Pkg Environment
Parameter Control
Validation/Enhancement of Yield Models
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2001 ITRS DR ITWG Co-chairs

• Europe
• Venkat Nagaswami
• Philips
• Lothar Pfitzner
• Fraunhofer Institute
• Japan
• Toshihiko Osada
• Fujitsu
• Fumio Mizuno
• Hitachi

• United States
• Milt Godwin
• Applied Materials MDR
• Christopher Long
• IBM
• Taiwan
• Len Mei
• ProMOS Tech, Inc.
• Korea
• D.H. Cho
• Samsung
• H.J. Kwon
• Hyundai

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Yield Model Defect Budget Tables 76-77 Key 2000
Updates

• Table 76 Yield Model and Defect Budget MPU
• Technology Requirements
• Table updated to reflect changes made to the
  Overall Roadmap Technology Characteristics (ORTC)
  Tables with respect to year/technology node, chip
  size and device pitch.
• Additionally an error in Random D0 calculation
  was caught and fixed.
• Table 77 Yield Model and Defect Budget DRAM
• Technology Requirements
• Table was updated to reflect changes made to the
  Overall Roadmap Technology Characteristics (ORTC)
  Tables with respect to year/technology node, chip
  size and device pitch.
•  

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Table 76 Yield Model Defect BudgetMPU
Technology Requirements Was vs. Is
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Table 76 Yield Model Defect BudgetMPU
Technology Requirements Was
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Table 76 Yield Model Defect BudgetMPU
Technology Requirements Is
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Table 76 Yield Model Defect BudgetDRAM
Technology Requirements Was vs. Is
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Table 76 Yield Model Defect BudgetDRAM
Technology Requirements Was
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Table 77 Yield Model Defect BudgetDRAM
Technology Requirements Is
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Defect Detection Table 78 Key 2000 Updates

• ITRS Node definition updated to reflect changes
  made to the ORTC Tables with respect to
  year/technology node. Used for reference and
  perspective.
• RD, Process, and Manufacturing Scan Speeds
  adjusted to a practical user standpoint as
  follows
• -RD scan speed remained the same, but an
  additional reference to wafers scanned per hour
  included.
• -Process scan speed adjusted to a 4 wafer per
  hour level, which relates to expectations from
  mfg. -Manufacturing scan speed adjusted to a
  level of desire for capturing defects of the size
  noted in the chart.

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Defect Detection Table 78 Key 2000 Updates

• In order to comply with ORTC guidelines,
  Critical defect size was doubled
• -RD 0.3X GR -gt 0.6XGR
• -Yield Ramp 0.5X GR -gt 0.8XGR
• -Volume Production 0.5X GR -gt 1.0XGR
• High Aspect Ratio defect sizes adjusted to equal
  Volume Manufacturing sizes at 1 X design rules.
  This is desired level dependent on the specific
  ratio.

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Defect Detection Table 78 Key 2000 Updates
(cont.)

• Backside particle size line was deleted due to no
  capability to measure defects at the size noted
  on 200mm wafers. Very little data exists for
  300mm and no defect size projections have been
  made.
• Defect Review Now labeled for Patterned Wafer.
  Un-Patterned review is just now being documented
  and is scan tool sensitive.
• Defect Review Coordinate Accuracy at the Defect
  Sizes noted in the Volume Manufacturing Size
  numbers give a more understandable and direct
  measure for manufacturing personnel to relate to.

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Table 78A Defect DetectionTechnology
Requirements Was vs. Is Short Term Years
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Table 78B Defect DetectionTechnology
Requirements Was vs. Is Long Term Years
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Defect Sources and Mechanisms Table 79 Key 2000
Updates

• ITRS Node definition updated to reflect changes
  made to the ORTC Tables with respect to
  year/technology node. Used for reference and
  perspective.

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Table 79A Defect Sources and Mechanisms
Technology Requirements Was vs. Is Short Term
Years
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Table 79B Defect Sources and Mechanisms
Technology Requirements Was vs. Is Long Term
Years
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Defect Prevention and Elimination Table 80 Key
2000 Updates

• ITRS Node definition updated to reflect changes
  made to the ORTC Tables with respect to
  year/technology node. Used for reference and
  perspective.

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Table 80A Defect Prevention and
EliminationTechnology Requirements Was vs. Is
Short Term Years
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Table 80A Defect Prevention and Elimination
Tech. Requirements Was vs. Is Short Term
Years (cont.)
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Table 80A Defect Prevention and Elimination
Tech. Requirements Was vs. Is Short Term
Years (cont.)
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Table 80A Defect Prevention and Elimination
Technology Requirements Was vs. Is Long Term
Years
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Table 80A Defect Prevention and Elimination
Tech. Requirements Was vs. Is Long Term Years
(cont.)
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Table 80A Defect Prevention and Elimination
Tech. Requirements Was vs. Is Long Term Years
(cont.)
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Yield Model and Defect Budget Key Issues for
2001

• Redundancy model for MPU, DRAM, SoC
• Benchmark fixability rates
• Develop calculator to use to determine what
  numbers mean to you
• Series of algorithms that show how to use the
  tables
• Update defect budget projections based on inputs
  from Japan and US companies
• Quantify placement of yellow and red in tables
  based on learning rates
• Re-validate systematic limited yield assumptions
• Address New processes/New Materials
• Need to include Cu Low Dual Damascene BEOL
• High K Gate Dielectric

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Defect Detection Key Issues for 2001

• Inspection of contacts and vias major issue, find
  defects in 101 AR structures
• HARI, Need Definition on
• Throughput, Defect Nature, Aspect Ratio, Feature
  size/shape type Red at 120, at least
• Ability to inspect at .5X GR
• Change in inspection speed requirement
• RD Section
• Red at 54, 0.3wfr/hr (previously inaccurate)
• Yield Ramp
• Move to 2 wfrs/hr, Yellow at 96, Red at 56
• Volume
• Keep 10 wfr/hr, Yellow at 150
• Major Issue Redefine as CoO to include space/
  capital 5 target, 3 Goal

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Defect Sources and Mechanisms Key Issues for
2001

• Need to redefine defect sourcing complexity
  factor
• Develop an algorithm for time to recognize
  trends
• Add a Defect Remediation section
• Add production considerations to table.
• Fault- vs. defect-centric approach
• Data acquisition
• storage/archival/retrieval/analysis/correlation
  capabilities time
• Merging DMS databases with tool databases

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Defect Prevention and Elimination Key Issues for
2001

• Continue to emphasize PoO guideline not specs
• Reassess categories and contaminants, e.g. new
  material categories critical vs. non-critical
• Address issue of variability (vs. absolute
  requirement)
• Need to capture (summarize) metrology concerns
  related to Table 80
• Wafer Environmental Control
• What is justification for decreasing AMC levels
  Need discussion
• UPW, Chemicals, Gases, New materials
• Specifics need to be addressed
• Trace metals and inorganics producing effects in
  gates that are reliability issues.

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Other Issues for DR in 2001 ITRS
UpdateApproaching 100nm

• Margin-less process (for features)
• photo, etch, CMP need
• Single wafer equipment
• Need integrated monitoring (current monitors
  off-line)
• Monitor hardware needs to be robust in operating
  environment
• SoC
• SRAMs
• are small and nuerous in design
• Represent large total of non-redundant structures
• Change in design methodology
• Design for Test
• DFT to overcome testing issue-generally only two
  pins available
• Yield loss due to AMHS
• No monitor for mis-handling
• Need automated monitor/feedback that does not add
  appreciable cycletime
• Need to drive improved process tool matching

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Other Issues for DR in 2001 ITRS UpdateSub- 100nm

• New Device Structures should be robust for
  process margin and defects
• Gate Ox to include RTP
• How to check process margins
• Not currently modeled
• Intelligent equipment needed to recover process
  window
• New material and impact on yield
• Cooperation between vendors and manufacturers
  required
• New method needed for defect detection (e-beam)

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US DR Domestic TWG Meeting Oct 2000 (Complete)

• Discussed Proposed Name Change
• Defect Reduction -gt Yield Management
• YMDB -remains the same
• DD -gt DD and Characterization
• DSM - gt Integrated Yield Management Technology
• DPE -gt Environmental and Consumable Contamination
  Control

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2001 ITRS Defect Reduction US Domestic TWG
Membership