Summary' MOSFET IV Modeling'

1
Summary. MOSFET I-V Modeling.
2
MOSFET Models in Spice
LEVEL1
Long channel model
developed in
1968 by Shichman-Hodges, applicable for
L
gt 4 µm
LEVEL2
Short channel model, developed in 1980,
applicable for
L
gt 2 µm.
Used
by MOSIS program
LEVEL3
Semi-empirical short channel model, developed in
1980, applicable for
L
gt 2 µm (more sophisticated than Level 2)
LEVEL4
BSIM
(Berkeley Short channel IGFET Model),
developed in 1985,
applicable for
L
gt 1 µm (one of
the most popular MOSFET Spice
models)
LEVEL5
New BSIM (
BSIM2
) model
LEVEL6
Simple empirical short channel
model (developed by Sakurai and
Newton in 1990))
LEVEL7
Universal extrinsic short
channel MOS model
(described by Lee et al.
(1993)), applicable for L gt 0.1 µm. Allows
to describe both
subthreshold and above threshold regimes.
LEVEL8
Unified long channel MOS model
(described by Lee et al. (1993)),
applicable for
L
gt 4 µm. Allows to describe
both subthreshold and
above threshold regimes.
LEVEL9
Short channel MOS model
(described
by Lee et al. (1993)), verified
for
L
gt 0.09 µm.

LEVEL10
Unified intrinsic short channel model
(described by
Lee et al. (1993)),
applicable for
L
gt 0.5 µm. Allows to describe
both subthreshold and
above threshold regimes
LEVEL11
Unified extrinsic amorphous
silicon thin film transistor
model
(described by Lee et al.
(1993)). Allows to describe both subthreshold
and above threshold regimes.
LEVEL12
Polysilicon thin film
transistors model
(described by Lee et al. (1993)).
Allows to describe both subthreshold and above
threshold regimes.
3
MOSFET IV Characteristics(equivalent circuit
for SPICE simulation)
Ids
1
2
M1
Vds
Vgs
0
4
Spectre Netlist Example
For NMOS
m23 (0 2 1 0) ami16N region sat w15.6e-6
l9.6e-6 as290.160007132556e-12
ad168.479993845061e-12 ps37.1999994968064e-6
pd37.1999994968064e-6 m1
vgs (2 0) vsource type dc dc1.5 vds (1 0)
vsource type dc dc5.0
srcSweep dc devvds paramdc start0.0
stop5.0 maxiters150 maxsteps10K
annotatestatus write"spectre.dc"
For NPN
ib (0 2) isource type dc dc10e-6 m1.0 q0 (1
2 0) npn region fwd m1.0 vce (1 0) vsource
type dc dc10.0
model npn bjt typenpn bf80 rb100 vaf50
cjs2pf tf0.3ns tr6ns cje3pf cjc2pf
5
Comparison of BasicMOSFET Models
lt Simple Charge Control Model (constant
m) lt Meyer Model lt Velocity Saturation
Model
L 2 mm VT 0.43 V Na 1022 m-3