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Hybridization studies at Fermilab

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AIT also tested wafer bumping with 200 mm thick wafers ... Lower fabrication cost than indium requiring bumping on one side only and a ... – PowerPoint PPT presentation

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Title: Hybridization studies at Fermilab


1
Hybridization studies at Fermilab
  • Prototype detectors
  • Readout chip mated to sensor
  • Experiences with both single dies and 4 and 6
    wafers using Indium
  • 2 5-chip modules mated at AIT
  • Dummies
  • Large scale studies using daisy-chained patterns
  • Process characterization, yield determination,
    working with industry to find out the problems
    and establish quality control procedure
  • Indium, Eutectic Pb/Sn solder treated with flux
    or PADS(Plasma assisted fluxless soldering)

2
Vendor search
  • A lot of enquiries/contacts but most companies
    are not interested or consider the job too
    challenging
  • Prototyping BOEING, AIT (both used indium and
    could do wafer or single dies)
  • Dummies
  • AIT (indium at 30 mm pitch)
  • AIT also tested wafer bumping with 200 mm thick
    wafers
  • MCNC/Unitive (solder both flux and fluxless)
    only 6 wafers (needs modification for 4).

3
Bump Bonding Technologies
  • Indium Bumps
  • Fabrication process (evaporation)
  • Minimum achievable bump size and pitch
  • Properties (electrical and mechanical)
  • Bumping and flip-chip bonding yields
  • Solder Bumps
  • Fabrication process (electroplating)
  • Minimum achievable bump size and pitch
  • Properties (electrical and mechanical)

4
Indium Bumps
  • Fabricated by thermal evaporation (using a
    lift-off process) for small bumps, finer pitch,
    better uniformity and control, single die bumping
    possible
  • Requires sputter deposited 2-metal layer barrier
    diffusion UBM
  • Soft compliant bump with a melting point of 156C
  • Form a non-conducting oxide layer (which has to
    be penetrated)
  • Both sides have to be indium bumped
  • Minimum bump sizes of 12 µm with a height of 8-10
    µm on a 18 µm pitch
  • Large arrays with 500K bumps on a single die
    possible
  • Flip-chip bonding using compression only (room
    temperature process) requiring 1-2 grams/bump
  • Bump resistance of 1-2 Ohms for a 15 µm x 15 µm
    square bump
  • Requires a flip-chip bonder with 1-2 micron
    alignment accuracy and planarization
  • Expensive to fabricate!

5
Indium bumps on ROC done at AIT
6
Results on Indium-bumped (AIT) prototype
detectors
  • Hit-map for three FPIX1-implemented detectors
    using radioactive source

7
Indium Bumps Summary
  • Indium bump/bonding is proven, able to fabricate
    small bumps on fine pitch (by evaporation) with
    good mechanical strength and high-yields for both
    bumping and bonding
  • Indium bonding requires bumps on both sides and a
    highly accurate flip-chip aligner/bonder with
    planarization capability
  • Indium bumps are expensive to fabricate!
  • Current achievable minimum bump dimensions of 12
    µm diameter, height of 8-10 µm, 18 µm pitch

8
Electroplated Lead-Tin Solder Bumps
  • Versatile in selection of solder alloy
    composition and MP
  • Self-aligning and self-planarizing bumps (upon
    reflow)
  • Requires fabrication of solder bump on one side
    only with an opposing "wettable" pad
  • Excellent electrical and mechanical
    characteristics
  • low resistance electrical path (2-3 µOhms)
  • low inductance (0.1 nH)
  • shear values in excess of 30 grams for 50 micron
    bump
  • Alpha particle emission from bumps
  • Potential for low-cost in high volume
  • Minimum size of 15 µm diameter bumps on a 20 µm
    pitch!

9
Eutectic Lead-Tin (3763) BumpsAfter Reflow _at_
215C
25 micron diameter, 50 micron pitch
10
Tests on dummies from MCNC/Unitive
  • Structures with 50 mm pitch (BTeV) and 150 mm
    pitch(CMS) on same wafer
  • 80 PADS single-chip assemblies and 38 fluxed
    single-chip assemblies (BTeV)
  • US-CMS also tested 5 double-chip assemblies and 1
    5-chip assembly (using flux-less solder)
  • Check connectivity between matched pair of pads
    using a semi-automatic probe station
  • Sometimes, need to apply a low voltage to break
    through
  • Also look for shorts between neighbors

11
Wafer layout
12
Solder bumps from MCNC
13
Results on connectivity
  • Much better results in the PADS assemblies than
    the ones using flux. The latter ones have a lot
    of visible residues
  • Concentrate only on PADS assemblies
  • 6 out of 71 assemblies have a lot of opens due to
    operator error. Assembly yield is 65/71 or 91.5
  • 190 traces per assembly. 52 opens. Trace yield
    99.58
  • 26 bonds per trace. Bump yield 99.98
  • Preliminary results from CMS module assemblies
    are comparable.

14
Problems
  • Operator error gross misalignment by one column
  • Channels need voltage to break through thought
    to be due to incomplete removal of oxide on Al
    before UBM was put on
  • Bridges (see X ray picture)
  • Irregular reflow
  • Lab vs cleanroom condition
  • Module assembly PADS process needs modification

15
Defect joint
16
Solder Bumps Summary
  • Solder bumps may provide an alternative to indium
    bump/bonding
  • Versatile in choice of alloy with MP between
    150-210C
  • Current minimum achievable bump sizes of 15 µm
    diameter on a 20 µm pitch!
  • Excellent electrical and mechanical
    characteristics
  • Self-aligning and self-planarizing bonding
    process
  • Lower fabrication cost than indium requiring
    bumping on one side only and a wettable layer on
    the other

17
Conclusions
  • Satisfactory results on real detectors using
    Indium
  • Dummy tests on 30mm ongoing
  • Fluxless solder by MCNC has good bond yield
  • Whole chip losses need to be better understood
    and controlled
  • Module assembly non-industrial standard
    (closely abutted to one another) MCNC needs to
    learn how to do this
  • Next round real detectors will be bumped and
    bonded at MCNC
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