2nd Asian IM User Group Meeting in Japan

1
2nd Asian IM User Group Meeting in Japan
SAMSUNG 2001.09.13.
2
Short Summary
This TRIZ application case was done by
researchers of SAIT(Samsung Advanced Institute of
Technology), not by TRIZ specialist, although
there was help from TRIZ specialist. They had 40
hours TRIZ lesson at company, so they just knew
the concept of Contradiction and could use
Techoptimizer As in 9 slide, as soon as they
encountered problem, they recognized it as
physical contradiction. But with that
contradiction expression they could not adopt 4
principles of solving physical contradiction. At
that time, TRIZ specialist helped them and
converted physical contradiction in another
expression TRIZ specialist thought earlier
expression was the result of mental inertial of
professional of specific area which had deep
relationship with process of manufacturing, dry
etching process. As soon as converting physical
contradiction, they could solve it by "Separation
by Space Principles". As in 15, 16, the typical
process of solving problem could be shown. In
generally, although they could solve one problem,
frequently, another problem occur after solving
one problem. As in this presentation, researchers
regarded it as Technical Contradiction. So they
used Contradiction Table in Techoptimizer. In
this case, they could find exactly the same
example of principle named "self-aligned
process". Besides solving current loss problem by
uniform shape of p-metal, they could additionally
remove the most critical and difficult process,
so they achieved quantum increase in yield. In
this case, some guy could say they are too lucky.
But it is the more difficult to deny the
powerfulness of contradiction table and Principle
module of Techoptimizer. In summary, from the
first case, SAIT TRIZ specialist (Hyo June Kim,
Nikolai Shpakovsky) learned the importance of
expression of Contradiction and role of mental
inertia at expression. From the second case, also
learned how to formulate the technical
contradiction from typical problem solving
process.
3
6 s Process for GaN Laser Diode
4
Before TRIZ in 6 sigma
40 mA, 6V
200mA, 6.7V
5
Project Definition
CTQ Selection

• Problem Statement
• - Life time of GaN Laser Diode
• present 1.7 hr (at CW 1mW, 20oC)
• - Threshold Current (Ith)
• present 200 mA
• variance of Ith 105 mA
• Objectives
• - Life time of GaN Laser Diode gt 1000 hr
• - Reducing of Ith Ith gt200 mA ? Ith 50 mA
• - Improvement of Ith variance s(Ith) 105 mA
  ? s(Ith) 10 mA

6
Process Mapping
Fabrication Process
7
Preparing strategy
8
Dry Etching for Ridge FormationTRIZ
Initial situation
9
Dry Etching for Ridge FormationTRIZ
Problem refinement
10
Dry Etching for Ridge FormationTRIZ
Solution of Contradiction


11
Dry Etching for Ridge FormationTRIZ
Solution of Contradiction


12
Dry Etching for Ridge FormationTRIZ
Solution of Contradiction


13
Dry Etching for Ridge FormationTRIZ
Solution of Contradiction


14
Dry Etching for Ridge FormationTRIZ
15
P-metal Layer Deposition TRIZ
16
P-metal Layer Deposition TRIZ
17
P-metal Layer Deposition TRIZ
Initial Situation

18
P-metal Layer Deposition TRIZ
Problem refinement
19
P-metal Layer Deposition TRIZ



Solution of Contradiction
20
P-metal Layer Deposition TRIZ
21
Passivation Layer Deposition DOE
22
After TRIZ in 6 sigma
23
After TRIZ in 6 sigma
45 mA, 5V, 5mW
30 mA, 5.8V, 3mW