Title: Professor Lior Klein
1- Professor Lior Klein
- Condensed matter physics, itinerant magnetism,
magnetic perovskites ruthenates and
manganites, spintronics tel 03-5317861 fax
03-5353298 e-mail kleinl_at_mail.biu.ac.il - http//www.ph.biu.ac.il/faculty/klein/
- Biography
- B.Sc., Physics and Mathematics, Tel-Aviv
University (1984) M.Sc., Physics, Tel-Aviv
University (1987) Ph.D., Physics, Tel-Aviv
University (1991) Postdoctoral research,
Bar-Ilan University (1991-1993) Postdoctoral
research, Stanford University (1993-1997) at Bar
Ilan University since 1997. - Research Overview
- Magneto-transport in thin films of ruthenates and
manganites giant planar Hall effect in
managnites resistivity of ferromagnetic domain
walls in SrRuO3 macroscopic quantum tunneling
in magnetization reversal quantum critical
behavior phase separation in manganites
ferromagnetic-super conducting hybrids.
2Magnetotransport in Thin Films of Magnetic
Perovskites
Perovskites are compounds with a general stucture
of A n1B nO 3n1. The octahedron BO6 is the
basic unit. Perovskites are one of the most
studied families of materials. Our study
concentrates on thin films of ruthenates
(Bruthenium) and manganites (Bmanganese).
3Magnetotransport in Thin Films of Magnetic
Perovskites
The manganites
- We explore
- Effects of phase separation on submicron length
scales - Novel magnetotransport properties Giant Planar
Hall Effect can be used as magnetic field
sensors or non-volatile magnetic memory.
4Switching behavior in epitaxial manganite films
Magnetotransport in Thin Films of Magnetic
Perovskites
Manganite films (LSMO) exhibit giant transverse
resistivity related to planar Hall effect. Due to
bi-axial in-plane magnetic anisotropy, the
transverse resistivity displays switching
behavior that could be useful in applications
such as magnetic sensors and magnetic
non-volatile memory elements.
5Magnetotransport in Thin Films of Magnetic
Perovskites
The ruthenates
Stripe domain structure in the ferromagnetic
SrRuO3 obtained with TEM in Lorentz mode. It
serves as ideal model system for studying
GMR-related issues
- We study
- Spin accumulation effects
- Single domain wall manipulation
- Current induced domain wall motion
- Macroscopic quantum tunneling in magnetic
nucleation process involving several thousands of
spins - Effects of ferromagnetic domain walls
- in ferromagnetic-superconducting bilayers