Title: HyperActive piezoelectric Nanosystems
1Hyper-Active piezoelectric Nanosystems NIRT
ECCS-0708759 C.B. Eom, R. Blick, M.S. Rzchowski,
X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk
University of Wisconsin-Madison, University of
Michigan, Ann Arbor, Penn State University, Bell
Laboratories
Background
Fabrication of Piezoelectric Cantilever
Epitaxial piezoelctric films on silicon
Major challenges are emerging as MEMS move to
smaller size and increased integration density,
while requiring faster and larger relative motion
range. Continued scaling of MEMS to the nanometer
regime, NEMS, requires revolutionary advances in
actuators. We overcome these challenges with
Hyper-Active NEMS devices using epitaxial thin
film heterostructures of Pb(Mg1/3Nb2/3)-PbTiO3
(PMN-PT) giant piezoelectric materials integrated
directly on silicon. We will explore the
scientific issues governing their nanoscale size
effects and electromechanical coupling.
2.50 µm
The crystalline quality of epitaxial
piezoelectric PMN-PT film on Si is better than
bulk single crystals.
Theory
TEM by X.Q. Pan, Michigan
We have developed the fabrication process of
piezo-MEMS cantilever with new class of giant
piezoelectric material.
Broader Impact
This research will develop a fundamental
scientific understanding of new phenomena in
hyper active nanoscale electromechanical devices,
which can be applied for novel and high
performance signal processing, communications,
sensors and transducers for medical imaging, and
nano-positioning actuators. Hyper-Active NEMS
from giant piezoelectric materials will reduce
power consumption and enhance speed of actuators
and sensitivity of sensors.
0.5 mm Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT)/ 0.5 mm Si,
5 mm wide and 100 mm long bi-morph cantilever
Orders of magnitude lower actuation voltage
required for piezoelectric switches displacements
(Z) as compared to classical electrostatic
switches. Inset show modeled cantilever.
Outreach
Longitudinal (d33) and Transverse (d31)
piezoelectric responses of epitaxial
piezoelectric PMN-PT film on Si is as good as
PMN-PT bulk single crystals.
Teachers from the SESO secondary school in
Mayaguez, Puerto Rico participating in atomic
layer controlled growth in the PIs laboratory in
summer 2005. We will bring secondary school
science teachers from Mayagüez, Puerto Rico each
summer for a nanotechnology learning/research
experience.
Epitaxial oxide thin film nanostructures
fabricated by e-beam lithography which can be
used for nanoscale piezoelectric characterization.
Longitudinal (d33) and Transverse (d31)
piezoelectric responses of a nano-island is much
higher than continuous films