Title: Lecture 23: DRAM Driving large capacitances
1Lecture 23 DRAM Driving large capacitances
- EECS 312
- Reading 10.3.3, 8.2.3, 8.5 (text)
2Lecture Overview
- Midterm 2 review
- Finish discussion of memories
- Chip packaging overview
- Driving large loads
3Midterm 2
4Packaging
5Bonding Techniques
6Flip-Chip Bonding
7Package Types
8Package Parameters
9Driving Large Capacitances
10Using Cascaded Buffers
X CL/Cin u tapering factor
This ignores self-loading (junction capacitance
of driving stage) derivation on page 450 of text
11tp as a function of u and x
12Impact of Cascading Buffers
13Output Driver Design
14How to Design Large Transistors
We dont want a long poly run resistive and
large parasitics Place multiple narrower devices
in parallel (with same gate signal)
15Tristate Buffers
Useful for signals with multiple drivers 2nd
implementation is better in some cases b/c no
series connected devices in output stage
16Lecture Summary
- Chips must be put in a package to interface with
other devices - Sending signals off-chip requires a lot of
driving capability - Driving large loads is best done using cascaded
buffers with tapering factor of e