Magnetic Resonance Studies of Silicon Nano-Crystal Flash Memory Structures

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Magnetic Resonance Studies of Silicon
Nano-Crystal Flash Memory Structures
J.T. Ryan, P.M. Lenahan (PSU), L. Vishnubhotla,
S. Straub, M. Ramachandran, R. Rao, T. Merchant,
and P. Kuhn (Freescale)
This study We find very large differences in
defects due to processing variations
Surprising result Dangling bond densities on
Si-nano crystal/SiO2 vs. Si-substrate/SiO2
Technique ESR
Problem in Flash SILC
Caused by deep level defects
Solution Nano-crystal Flash
New problem Interlayer oxide subject to charge
injection
Important Defect E center
Poster 58