MOSFET Module Series

1
MOSFET Module Series
2
Comparison between Trench IGBT and Trench MOSFET
Trench MOSFET
Trench IGBT
G
G
E
S
P base
n substrate
D
C
Body diode
S
E
G
G
C
D
3
Feature and Application of MOSFET Module

• Low VDS and Low VSD
• Advanced 0.35mm MOSFET Chip Applied
• Snubber less
• Guarantee of avalanche capability at Turn-off
• Recovery
• Thermal sensor included
• Unit Size reduction Easy for assembly
• 6in1 compact package (FWDi chips are not
  necessary)
• Signal (gate and emitter) and
  thermal sensor connector
• Application
• Forklift
• Low voltage high power application

4
Chip On-state resistance
( )Tentative
5
Output characteristics
0.8mW
No threshold voltage
6
Comparison between Trench IGBT and Trench MOSFET
7
Avalanche turn-off switching waveform (FM400TU-07A
)
Cond. VDD48V VGS15V Tch125?
Turn-off
Avalanche period 175ms
ID
Turn-on
VDS
110V
48V
Avalanche Energy 2.3J
ID50A/div,VDS50V/div,t50ms/div
8
Outline Drawing(200600A)
110x90 mm
Thermal Sensor Connector
P
N
W
U
V
Signal Connector
9
Outline View
10
Comparison with Discrete MOSFET
6in1
Discrete MOSFET
Several 10 several 100 pcs
11
Avalanche capability comparison
Discrete
Module
(Not OK)
?(OK)
Many paralleled MOSFET Avalanche capability not
guarantee ?with snubber circuit
Single MOSFET Chip Avalanche capability
guarantee ?without snubber
Avalanche energy
12
Paralleling Module (2in1)
Short
P

P

U
V
W
N
N
6in1 Ir 2in1 Irx3
2in1 Chopper
13
Paralleling Circuit
DC
N
P
W
V
U
AC
14
MOSFET Module Line up
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MOSFET Module Development Schedule
6in1
Tentative