Growth of InAs nanostructures by droplet epitaxy

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Growth of InAs nanostructures by droplet epitaxy

• Chao Zhao Supervised by Yonghai Chen

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• Droplet epitaxy

FIG.1. The sketch map of droplet epitaxy.

• From http//www.nims.go.jp/nanodevice/nanodevice
  -koguchigroup/index.htm

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• Our work

FIG.2. (a) In source position (b-d) AFM images
of In droplets for samples 5, 7 and 14 (e)
variation of In amount with the samples, the
average amount is 1.35ml(f-h) AFM images of InAs
structures for samples 5, 7 and 14.
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• Conclusion

• There is a critical deposition amount (1.1ml)
  for the indium to form InAs dots even there is no
  droplet.
• When the deposition amount exceeds 1.4ml, In
  droplets form, which act as nucleation centers
  for the formation of InAs rings.

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Thank you for attention!