Title: PowerPoint Presentation Accelerated Molecular Dynamics Methods
1Temperature Accelerated Dynamics
A web-based presentation Arthur F.
Voter Theoretical Division Los Alamos National
Laboratory Los Alamos, New Mexico USA Work
supported by DOE/BES
2Infrequent-Event System
The system vibrates in 3-N dimensional basin many
times before finding an escape path. In
temperature accelerated dynamics (TAD), we raise
the temperature to quickly find a few escape
events. Using temperature extrapolation, we
determine which event would have happened first
at the low temperature.
3Temperature Accelerated Dynamics (TAD)
- Concept
- Raise temperature of system to make events occur
more frequently. Filter out the events that
should not have occurred at the lower
temperature. - Assumptions
- - infrequent-event system
- - transition state theory (no correlated events)
- - harmonic transition state theory (gives
Arrhenius behavior) - k n0 exp-DE/kBT
- - all preexponentials (n0) are greater than nmin
4TAD Procedure
- - Run MD at elevated temperature (Thigh) in state
A. - - Intercept each attempted escape from basin A
- - find saddle point (and hence barrier height)
- (e.g., using nudged elastic band method of
Jonsson et al). - - extrapolate to predict event time at Tlow.
- - Reflect system back into basin A and continue.
- - When safe, accept transition with shortest time
at Tlow. - - Go to new state and repeat.
5 6TAD temperature-extrapolated time
Because each rate is assumed to be
Arrhenius, k n0 exp-DE/kBT , the time
for each particular event at high T can be
extrapolated to low T tlow thigh
expDE(1/kBTlow- 1/kBThigh) . This time is
sampled correctly from the exponential
distribution at low T, mapped from the high T
sample
phigh(t)
thigh
tlow
plow(t)
t
t
7when can we stop?
8(or d 1-f)
9- TAD - when we can stop the MD and accept an event
10MDTAD metal deposition simulation
- MD for each deposition event (2 ps)
- TAD for intervening time (1 s)
- Embedded atom method (EAM) for fcc metals
(e.g., Cu, Ag, LANL fit)
11MDTAD deposition of Cu/Cu(100)
T77K, flux 0.04 ML/s, matching deposition
conditions of Egelhoff and Jacob (1989).
boost factor 107
Tim Germann Francesco Montalenti
12MDTAD deposition of Cu/Cu(100)
- Concerted events observed at T77K and T100K
Tim Germann Francesco Montalenti
13Ag/Ag(100) deposition, MDTAD
- Deposition flux 0.07 ML/s. Embedded-atom
method potential. - Perpendicular steering effect gives roughness at
very low incoming K.E. - Activated processes reduce this roughness as T is
raised.
Montalenti, Sorensen and Voter, Phys. Rev. Lett.,
87, 126101 (2001)
14MDTAD deposition of Cu/Ag(100)
T77K, flux 0.04 ML/s, matching deposition
conditions of Egelhoff and Jacob (1989).
1 ML (25 seconds)
Second-layer Cu atoms exhibit novel mobility at
T77K, due to epitaxial strain of Cu on Ag(100).
Sprague, Montalenti, Uberuaga, Kress and Voter,
Phys. Rev. B, in press, 2002.
15Buckyball with a Vacancy using TAD
t0.0 s
t2.2x10-4 s
t1.3x10-4 s
t2.3x10-2 s
t2.3x10-2 s
t2.3x10-2 s
High Temperature 3000K Low Temperature
1000K States Visited 38 Total Time
2.3x10-2 s Boost 1.5x106 B.P. Uberuaga,
S.J. Stuart, and A.F. Voter (2002)
16TAD Nanotube fragment to almost-buckyball
High Temperature 3000K Low Temperature
1500K States Visited 680 CPU Time 297
hours Total Simulation Time 14 ms Boost 127
Equivalent Unboosted CPU Time 1.7 years B.P.
Uberuaga et al (2002)
t0.0 s
t49 ns
t54 ns
t200 ns
t207 ns
t14 ms
17