STATUS OF TRDPASA MASSTESTING

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STATUS OF TRD-PASA MASS-TESTING

• Hans K. Soltveit

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NEEDLE POSITIONING
Corner dice, used to center the needles on the
pad
Power needles
Power needles
Input needles
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NEEDLE POSITIONING
Output needles Staggered pads
Input needles
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NEEDLE POINTS
Needle scratching
Different thickness of the wafer
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NEEDLE DUST
Happens mostly at the staggered output
needles. Creates bad contacts
Staggered output needles
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MEASURED PARAMETERS

• The internal reference voltages VrefN, VrefP and
  VcomB (1/chip).
• The two output voltages Vout and Vout- (21/chip)
• Power consumption

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MEASURED RESULTS AND YIELD
17850 (19125) has been tested
Used cuts
Min
Mean
Max
Vout (mV) 300 400 - 550 Vout - (mV) 1270
1400 - 1550
VrefN (mV) 300 420 - 550 VrefP (mV) 1270
-1400 -1550 Vcom (mV) 900 960 - 1000
Power consumption (mA) 80 100 - 125
Channel(s) that show no contact are not included
in the yield calculation Some of the these
channel(s) has been restested, and shows correct
value. The same is true for power consumption,
but these are included.
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Parametric spread for a given wafer
VrefN (mV)
VrefP (mV)
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Parametric spread for a given wafer
VcomV (mV)
VcomB (mV)
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Parametric spread for a given wafer
Current (mA)
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Measured once per chip Internal
reference All-wafers
VrefN (mV) 1270 - 1550
VrefP (mV) 300 - 550
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Measured once per chip All-wafers Internal
reference
Vcom (mV) 800 - 1050
Comv (mV) 850 - 1050
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All-wafers 21 Output Channels
VoutP (mV) 300 - 550
VoutN (mV) 1270 - 1550
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All-wafers
Correlation between VreP and VreN
Current 80 -125 (mA)
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YIELD
WAFER 1. 99.84 2. 99.76
3. 99.76 4.
99.76 5. 99.84
6. 100 7. 99.76
8. 100 9. 99.83
10. 100 11. 100
12. 100 Average yield 99.84