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ELCT 762 Final Projects

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er=3.7 tan d= 0.017. Dielectric height = h1 = 4 mils ... Between lines, s (edge to edge) 25 mils for reference. 5 mils space (edge to edge) for test case. ... – PowerPoint PPT presentation

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Title: ELCT 762 Final Projects


1
ELCT 762 Final Projects
  • Structure Analysis by using HFSS

2
General Project Description
  • Given a reference restructure
  • Task Compare to s-parameters of reference
    structure to test structure with Ansoft HFSS.
  • Before you start, determine a hypothesis.
  • Annotate and discuss assumptions
  • Identify and discuss issues relating to accuracy.
  • Summary Judgment against hypothesis.
  • Full mark will be 20 points.

3
Report Format is Power Point
  • Use outline as described on previous page
  • Size of document should be geared to 20 minutes
    if it were presented (20 pages).
  • The theme is technical communication
  • Audience is electrical engineers who may not
    experience with ANSOFT.
  • Grading will be how well you communicate to the
    instructor.
  • You need to choose a name for your project case
  • Extra Credit determine the convergence of the
    S-parameters relation to the edge of ports (max
    2 points).
  • Extra Credit Determine equivalent circuit in
    PSPICE. (Hint lookup peeling and step response.
    Max 4 pints )

4
Basic microstrip structure - Cross section
5 mils wide W
s for CU 4.0e8 S/M
1 mil thick - T
er3.7 tan d 0.017
Dielectric height h1 4 mils Width1 inch
er3.7 tan d 0.017
Dielectric height h1 50 mils
er3.7 tan d 0.017
Dielectric height h1 4 mils
Bottom trace will not be used for some projects
Frequency range is 100 MHz to 10GHz
5
Your job to create Top view
Start 1 square max for dielectric Need to
adjust dielectric Dimensions to structure
6
Terminology
Terminal_1
Terminal_1
Terminal_2
Terminal_2
Port_1
Port_2
7
Project 1 Compare DS21 and DS11 between
structures
s
  • Between lines, s (edge to edge) 25 mils
  • All lines 1in length
  • 10 bends. 25 mils jog
  • Line length is defined as the center of the
    lines.

s
8
Project 2 Compare DS21 and DS11 between
structures
Via cross section
  • Between lines, s (edge to edge) 25 mils
  • All 1 length
  • 10 vias. 10 mils cylinder, 20 mil anti via.
  • Via spacing center to center is 50 mils

9
Project 3 Compare DS21 and DS11 between
structures
Via cross section
  • Between lines, s (edge to edge) 25 mils
  • All 1 length ( include via length)
  • 10 vias. 10 mils cylinder, 20 mil anti via.
  • Via spacing center to center is 50 mils
  • Trace connect on other side of board

10
Project 4 Compare reference db s21 to 10 times
db of s21 small section
  • Between lines, s (edge to edge) 25 mils
  • All 1 length
  • Test case is 100 mils long

100 mils wide
11
Project 5 Compare DS21 and DS11 between
structures
  • Between lines, s (edge to edge) 25 mils for
    reference
  • 5 mils space (edge to edge) for test case.
  • All 1 length
  • Trace connect on other side of board

12
Stackup for last
1 mil thick - T
er3.7 tan d 0.017
Total height b 57mils
Dielectric height h1 55mils
13
Differential S Parameters
14
Differential S Parameters (contd)
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