Chapter 4: Switches, Relay and Power-Control Semiconductors - PowerPoint PPT Presentation

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Chapter 4: Switches, Relay and Power-Control Semiconductors

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Chapter 4: Switches, Relay and Power-Control Semiconductors Adapted from: Kilian, C. T. (2001), Modern Control Technology: Components and Systems – PowerPoint PPT presentation

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Title: Chapter 4: Switches, Relay and Power-Control Semiconductors


1
Chapter 4Switches, Relay and Power-Control
Semiconductors
  • Adapted fromKilian, C. T. (2001), Modern
    Control Technology Components and SystemsDelmar

2
Power Transistors
  • Used extensively in control circuits as both
    switches and power amplifiers.
  • A small current is used control a much larger
    current.

3
  • Current gain is expressed as
  • Power is dissipated anytime there is current
    through it and voltage across it.

4
Class A Operation
  • Biased in the middle of the operational range.
  • Input signal increases or decreases the base
    current.
  • Current at the load is inverted.

5
Class B Operation
  • Transistor is biased just below 0.7V (operational
    bias point).
  • Only half a signal will be amplified.

6
Class C Operation
  • Transistor is either fully saturated or cutoff.
  • Acts as a switch.

7
Power Dissipation
  • Transistors are rated on the amount of power they
    can dissipate.
  • The greater the current flow through the
    transistor, the greater power, thus heat, it must
    dissipate.
  • Excessive heat will cause damage to the device.

8
Heat Sinks
  • Heat sinks are used to draw heat from the device.
    Typically metal with fins for air cooling.
  • Heat Sink compound is used to increase thermal
    transfer.

9
Insulating the Case
  • On many power transistors, the case itself is
    connected to the collector and may need to be
    insulated.
  • A thin film of mica is typically used.

10
Darlington Pair
  • Integrated dual transistors that provide a very
    large beta (gt500).
  • Small current on base the 1st stage controls a
    large current biasing the 2nd stage.

11
Field Effect Transistors
  • Performs job similar to a BJT.
  • Junctions are Gate, Drain, Source.
  • Gate-Source Voltage (VGS) controls the load
    current (IDS).
  • JFET (Junction FET) is one version, does not have
    large current control.
  • N-Channel use a negative gate voltage, P-Channel
    use a positive.

12
  • MOSFETs capacitive couple the gate preventing any
    direct path for current flow.
  • Can control high currents.
  • Gain is called transconductance and measured in
    siemens or mhos. It is the inverse of
    resistance.Gain Change in current
    Change in voltage

13
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14
Silicon-Controlled Rectifiers
  • 3-terminal power-control device that is a
    thyristor.
  • Thyristors are 4-layer semiconductors that act as
    a switch.
  • Terminals Anode, Cathode(K), Gate

15
  • Gate current is used to switch SCR on.
  • The gate cannot turn the SCR off.
  • An SCR will be off unless the VAK exceeds the
    forward breakover voltage, at which time it will
    be in the forward conduction region.
  • The SCR will remain in conduction until the
    forward current drops below the holding current
    (IH).

16
  • With a gate voltage, the breakover voltage is
    dramatically reduced.
  • When gate voltage (thus current) is high enough,
    the SCR starts conducting almost immediately
    (VGT, IGT).
  • SCR will remain in conduction even if the gate
    voltage is removed.
  • Minimum current required to stay in conduction is
    called Holding Current (IH).

17
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18
  • Means of turning off the SCR (current lt IH)
  • Open the load current.
  • Use Forced Commutation to short out the SCR.
  • AC Circuit automatically turns it off on the
    opposite alternation.

19
  • SCRs are often used in AC circuits to control
    power to the load, such as DC Motors for speed
    control.
  • By controlling the resistance of the gate, IGT is
    reached based on the instantaneous AC voltage.
  • The SCR may be set to fire anywhere within the
    1st 90 degrees of a cycle.

20
  • The resulting IAK wave form has delay and
    conduction regions.

21
  • Addition of a capacitor creates a phase shift
    allowing control over a wider range of the
    alternation.

22
  • Through use of a full-wave rectifier, power may
    be controlled during both alternations for DC
    applications.

23
  • Other conditions that will cause an SCR to fire
  • If the VAK rises too quickly dv/dt. A snubber
    may be added to prevent this effect.
  • VAK and IH are not held low long enough.
  • Excessive heat can lower the breakover voltage.
  • LASCR (Light-Activated SCR) is one which used
    light entering a small window fires the device.

24
SCR Ratings
  • Current capability 0.5A to 1000A
  • VDRM Peak forward blocking voltage
  • VRRM Peak reverse blocking voltage
  • ITSM Peak surge current
  • IGT Gate trigger current
  • VGT Gate trigger voltage
  • DV/DT Critical voltage rise V/uS

25
TRIAC
  • Similar to an SCR but can conduct in both
    directions.
  • Leads are labeled MT1, MT2 and Gate

26
Delay Time Conduction Time
  • Delay time (or holdoff) is the time the thyristor
    is shutoff preventing current flow.
  • Conduction time is length of time the thyristor
    is in conduction.

27
  • The time for a half-cycle is0.5 x 1/60Hz
    8.33mS
  • Delay Time Conduction Time 8.33mS
  • If an SCR had a delay time of 3mS, its
    conduction time would be 5.33mS(8.33mS 3mS)

28
Conduction Angle
  • Conduction angle is the number of degrees into a
    waveform the thyristor fires.
  • With an alternation being 180 degrees, if an SCR
    fires at 30 degrees, it will be in conduction for
    150 degrees.
  • Converting between conduction time and conduction
    angle8.33mS/180 46.3uS/deg

29
Trigger Devices
  • Due to the low tolerances in both the firing
    current of SCRs and Triacs, triggering devices
    are often used to more dependably fire the
    device.

30
Unijunction Transistors
  • The UJT fires when 2/3 of the voltage between
    Base1 and Base2 is on the emitter, the UJT will
    fire.
  • When Vc reaches the trigger voltage (Vp), the UJT
    fires providing gate current to the SCR.

31
Programmable Unijunction Transistor
  • The PUT behaves like the UJT, but the firing
    voltage is programmable using gate voltage.
  • When the Anode voltage reaches the gate voltage,
    the PUT fires gating the SCR.

32
DIAC
  • A two-terminal bi-directional device which fires
    when the breakover voltage is met in either
    direction.
  • Allows for symmetrical firing of TRIACS.

33
Solid State Relays (SSR)
  • Solid State relays are used for an isolated
    control of high AC or DC loads.
  • A small voltage energizes an LED which optically
    fires a triac control circuit.
  • Does not control based on AC firing angle, but
    controls the length of time a device is energized.
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