Crystal Growth

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???????? (II)

• ???
• ?????? ??????
• 1/15/06

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Outline

• ULSI ?????
• ULSI ????
• ULSI ?????
• ULSI ??????

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ULSI ?????

• Semiconductor
• Semiconductor devices
• MOSFET
• CMOS
• Integrated circuits
• Applications of IC

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Semiconductor

• Conductor, insulator
• Semiconductor ? 102 109 ohm-cm at room T
• element Si, Ge (IV)
• compound GaAs (III-V), ZnS (II-VI), SiC
  (IV-IV)
• Semiconductor devices

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Market Share in Semiconductor Devices

• Si-based (especially MOSFET) devices are dominant

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MOSFET
M Metal (or n-poly, p-poly) O Oxide (gate
oxide) S Semiconductor (p-Si or n-Si) FET Field
effect transistor (Ey, Ex)
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CMOS

• Complementary MOS NMOS PMOS pair (CMOS NMOS
  PMOS)

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IC

• Integrated Circuits composed of many devices on
  a chip (die)
• SSI small scale IC
• MSI medium scale IC
• LSI large scale IC
• VLSI very large scale IC
• ULSI ultra large scale IC

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Application of ULSI
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ULSI ????

• IC fabrication flow
• Crystal growth
• Cleaning
• Thin film deposition
• Oxidation
• Diffusion
• Ion implantation
• Etching
• Lithography
• Metallization
• Planarization
• CMOS process flow

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IC Fabrication Flow

• ???? ? IC?? ? ?? ? ??

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Crystal Growth
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Wafer Size

• size? gt number of chips ?, cost ?

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??? vs. ???
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?????
SiO2 2C ? Si 2CO
(??98)
Si 3HCl ? SiHCl3 H2
(???????)
SiHCl3 H2 ? Si 3HCl
(??99.999999999) 11?9
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???
(?? 0.310mm/min ?? 220rpm)
(??Si? ????)
SiO2 ? SiO O
(??)
(??)
(??????)
(?? ???? ???? ????)
(??????)
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RTP

• Rapid thermal processing

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Diffusion
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Ion Implantation
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Etching
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ULSI ?????

• Moores law
• Advanced MOSFET
• Physics
• Material
• Technology

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Challenges in IC

• Moores law number of transistors 2X/1824
  months gt density ?, performance ?, functionality
  ? (SOC)

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Technology Roadmap

• Device dimension ? lt physics material
  technology

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Recent Trend of MOSFET

• Trend of advanced MOSFET
• High-k (C ?A/d)
• Low-k
• Cu (R ?l/A)
• Metal gate
• Strain (m q?/m)
• ???????