Next Generation Memory Market to 2017

1
Global Next Generation Memory Market (2012
-2017), By Technology (DRAM, SRAM, Flash Memory,
Memristor, Magneto Resistive RAM (MRAM), Phase
Change RAM (PCRAM), Ferroelectric RAM),
Application Geography
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• Published December 2012
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2
Global Next Generation Memory Market (2012
-2017), By Technology (DRAM, SRAM, Flash Memory,
Memristor, Magneto Resistive RAM (MRAM), Phase
Change RAM (PCRAM), Ferroelectric RAM),
Application Geography

• Next generation memories are the emerging
  non-volatile memory technologies, which are
  expected to replace existing memories. Not all
  existing memories will be replaced though. Next
  generation memories majorly targets the
  non-volatile memories such as NAND and NOR. High
  write and read latency, scalability, high
  endurance etc. makes emerging memories the best
  replacement for traditional non-volatile
  memories. Next generation memory technologies
  covered in this report are MRAM, PCRAM, FeRAM and
  memristor also called as ReRAM. Out of these
  memories, only MRAM and FeRAM have reasonable
  market share and they are quite commercialized in
  the market. PCRAM has very marginal market and
  memristor is set to enter the market by the end
  of 2013.
• The major drivers for the next generation memory
  market are faster switching time, high endurance
  and power efficient. In addition, the huge
  application base of traditional memories will
  also become the driver for this market. Since
  these memories are not completely established,
  there are still flaws in processes which causes
  drawbacks like instability and low write
  endurance rate in some of the memories. As
  mentioned, these memories are the replacement for
  flash memories in near future. The flash market
  has already tapped the huge market and hence it
  makes the way for next generation memories.
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3
Global Next Generation Memory Market (2012
-2017), By Technology (DRAM, SRAM, Flash Memory,
Memristor, Magneto Resistive RAM (MRAM), Phase
Change RAM (PCRAM), Ferroelectric RAM),
Application Geography

• The major issue for next generation memories is
  its design cost. Not all the processes are intact
  yet, hence it increases the cost of the process
  and design. However, early adoption of these
  memories will be the game changing strategy for
  memory market. Most of the next generation
  memories are also called as Universal memory,
  which performs both the function volatile and
  non-volatile. So the early adoption of such
  memories will be the crucial for the companies.
• The companies currently involved in next
  generation memory market are Samsung (South
  Korea), SK Hynix (South Korea), Micron (U.S.),
  Elpida (Japan), Toshiba (Japan), Powerchip
  (Taiwan), Winbond (Taiwan), Fujitsu (Japan),
  Nanya (Taiwan), Rambus (U.S.), Everspin
  Technology (U.S.), IDT Incorporated (U.S.), HP
  (U.S.) etc.
• Scope of the report
• - On the basis of type
• - On the basis of application areas
• - On the basis of geography
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