Growth and Analysis of AlGaN/GaN Heterostructures for P-type Base for HBT Growth and Analysis of AlN on SiC

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Compact Power Supplies Based on Heterojunction
Switching in Wide Band Gap SemiconductorsRobert
Davis, North Carolina State Universityemail
robert_davis_at_ncsu.edu http//muriserver.mte.ncsu
.eduContract ONR MURI N000014-98-1-0654
MURI, year started 1998
March 2002

• Objectives
• Develop theory and measure carrier dynamics
• Low dislocation density films
• Wafer bonding
• Fabricate power switches and high-frequency power
  devices in III-Nitrides
• DoD Capabilities Enhanced
• Microwave switches transmit/receive modules
• X-band microwave power devices phased array
  radar
• Low noise amplifiers and wireless base stations
• High voltage switches

Negligible dispersion.No hysteresis is observed
in the high bias I-V curve.
GaN HEMT with SiN/SiO2/SiN gate dielectric

• Accomplishments
• Simulated/measured hot electron transport in AlN
• Developed low dislocation density GaN films
• Determined film microstructure/property relations
• Determined band offset GaN/SiO2 interface
• Fabricated high-voltage HEMTs, vertical
  transistors
• Fabricated and tested novel AlGaInN/InGaN HFETs

• Approaches
• Monte Carlo simulation and measurement of
  hot/ballistic transport in AlN and GaN
• X-ray mapping SiC substrate
• High and low defect density GaN
• Wafer bonding
• HFETs with nitride gate dielectrics
• Vertical transistors
• Novel HFETs
• Ohmic contacts/p-GaN, piezoelectric
  coefficients/GaN