Fabrication of MultiLayered MicroStructured Si Ribbons and Application for Flexible Thin Film Transi

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Fabrication of Multi-Layered Micro-Structured Si
Ribbons and Application for Flexible Thin Film
Transistor
Objectives
Technical Approach
Two Etching Processes

• To develop fabrication techniques for 3-D
  micro-structured Si which can be applied for
  various electronic devices.
• To develop fabrication processes using low-cost
  bulk wafers instead of expensive SOI.
• To use these structures as the semiconductor
  layer for high performance and large area
  flexible circuits.

STS-ICPRIE
Metal Evaporation
KOH etching
Technical Accomplishments
Flexible TFTs based on Si ribbons

• Developed means to generate multi-layered Si
  ribbons from bulk Si-111 wafer using the two
  etching processes.
• Printed well-ordered arrays of these Si ribbons
  in sequence on various substrates.
• Built flexible TFTs with Si ribbons that
  exhibit a mobility of 1 cm2/Vs, a on/off ratio
  of 140 and a threshold voltage of -2 V.

Contact H. C. Ko heungcho_at_uiuc.edu and J.
Rogers jrogers_at_uiuc.edu