Title: Consortium for Metrology of Semiconductor Nanodefects
1Consortium for Metrologyof Semiconductor
Nanodefects
- Semi-Annual Research Review
- 20-21 July 2000
2Highlights (1999-2000)
- 5 active graduate students, 4 undergrads
- Michael Jordan and Ping Ding receive Ph.D.
- DDSURF continued development,Technology Transfer
Workshop IV - Film capability added to DDSURF
- 5 Technical Papers
- SRC Project on Hybrid-Emission Defect Instrument
Funded (100k/yr for 3 years)
3Tracking Consortium Graduates
4Member Organizations
ADE/ADE Optical AMD Applied Materials Duke
Scientific Inspex/Hamamatsu KLA-Tencor cumulati
ve 1996-2000, current members are boldface
Lawrence Livermore Labs OSI Inc. Intel SEMATECH Su
mitomo Sitix VLSI Standards
5Recently Completed Projects
- Silicon Defects and Optical Wafer Inspection
Systems - Scatterometer Enhancements
- Light Scattering by Particles/Defects on CMP
Wafers
6Silicon Defects and Optical Wafer Inspection
Systems
- Process for Fabrication of Standard Pyramidal
Pits in Si - Artifacts Fabricated, Characterized, and Used in
Scattering Experiments - Scattering Model Comparison
7Pyramidal Pit (0.53 µm) in Si
8In-plane, Differential Scatter of Pyramidal Pits
in Si
s-polarization incidence angle 65 wavelength
0.6328 µm
9In-plane, Differential Scatter of0.34 mm
Pyramidal Pit in Si
s-polarization incidence angle 65 wavelength
0.6328 µm
10Scatterometer Enhancement
- New visible wavelength scatterometer designed,
built, and tested - Provides BRDF measurement capability
- Competitive specs
- Used in thesis projects
11Light Scattering by Particles/Defects on CMP
Wafers
- Identified and defined critical CMP defects
- Acquired standard defect samples
- Dishing correlation as function of materials
- Angle-resolved scattering measurements of
roughness, patterns, and particles - Experimental results in reasonable agreement with
models
12Dishing Material and Geometry (Pitch) Dependence
Modulus of elasticity Em(W)59e-6
lb/in2 Em(Cu)17e-6 lb/in2 Dishing at L10 mm
and PD1/2 D(W)71.4 nm D(Cu)144 nm
13Natural Scratch and Artifact
v-shape, 0.85 mm wide, 95 nm deep scratch on SiO2
- made by diamond tip on AFM
v-shape, 1.3 mm wide, 4.7 nm deep scratch on SiO2
14Scattering by 0.305 mm PSL Spheres on Si
Substrate on SiO2 Film
0.785-mm SiO2
Si
15Consortium Research Roadmap
- Instrumentation and Scatterometry
- Fabrication and Characterization of Standards
- Modeling and Simulation