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ME 381R Fall 2003

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How is the Band Gap formed? For free electron in metals: U 0 because of high electron density ... Occupation of donors by electrons: Occupation of acceptors by holes: ... – PowerPoint PPT presentation

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Title: ME 381R Fall 2003


1
ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid
Science and Technology Lecture
12 Semiconductors
Dr. Li Shi Department of Mechanical Engineering
The University of Texas at Austin Austin, TX
78712 www.me.utexas.edu/lishi lishi_at_mail.utexas.
edu
2
Semiconductors
X (real space)
3
K Space
Semiconductor
Forbidden gap
Metal
E
k
k
4
Band Gap Energy Eg
5
How is the Band Gap formed?
  • For free electron in metals U? 0 because of high
    electron density
  • and short electrostatic screening length
  • Electron wavefunction scattered by periodic
    potential?standing
  • wave when K np/a (think about interference of
    light)

6
Bandgap Formation
7
Multiple Bands
8
Bandstructure of Si and Ge
9
Electrons and Holes
10
Charge Carrier Density
Parabolic approx (free electron)
Electron
Hole
m effective mass
11
f(E) and D(E)
Intrinsic Semiconductor
Doped Semiconductor
12
Law of mass action
13
Intrinsic Semiconductors
14
Doped Semiconductors
15
Dopant Energy Level
16
Carrier Densities in Doped Semiconductors
Law of Mass Action for semiconductors
Charge accounting
17
Charge Density in Doped Semiconductors
Charge neutrality (accounting)
Occupation of donors by electrons
Occupation of acceptors by holes
18
where
19
Temperature Dependance of Carrier Concentration
I) Low temperature limit
Carrier freeze-out
II) Higher temperature limit
Saturation
III) Muy caliente limit n ni ?
intrinsic region
20
Carrier Density vs. Temperature
HOT
COLD
21
Carrier Transport in Semiconductors
  • Current Density
  • Mobility
  • Electrical Conductivity
  • Drift Velocity

22
Carrier Scattering
  • Carrier Scattering Mechanisms
  • Defect Scattering
  • Phonon Scattering
  • Boundary Scattering (Film Thickness,
  • Grain Boundary)

23
CarrierScattering
  • Intra-valley
  • Inter-valley
  • Inter-band

24
Defect Scattering
(i) Ionized defects
Perturb potential periodicity
Charged defect
(ii) Neutral defects
25
Scattering from Ionized Defects (Rutherford
Scattering)
  • Average Carrier Velocity in Semiconductors
  • (not the drift velocity)
  • Mean Free Time

1/? ? ltvgt-3 ? T-3/2
  • Mobility

26
Carrier-Phonon Scattering
  • Phonon modulates the periodic potential?
  • Carrier scattered by moving potential

1/tph
27
Mobility
28
Electrical Conductivity
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