Rapid Thermal Processing

1
Rapid Thermal Processing

• Lecture 13b Handout

2
T-t Curves B in Si

• Undoped Si grown epitaxially on B-doped Si(100)
• Tgt730C, 57.5 nm
• Hi T ? lowest budget
• Ediff 3.6 eV Edep 0.52 eV

3
Boron Profiles

• Lowest budget (Hi T) gives worst spreading
• Thermal budget prediction fails

4
T-t Curves Cu in Si

• Undoped Si grown epitaxially on Cu-doped Si(100)
• Tlt700C, 57.5 nm
• Hi T ? lowest budget
• Ediff 1.0 eV Edep 1.5 eV

5
Copper Profiles

• Lowest budget (Hi T) gives best spreading
• Thermal budget prediction OK

6
Superposing other Process Constraints

• Eundes gt Edes

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Final Optimization

• From a kinetic perspective, its usually best to
  operate
• Better along an edge of allowed window
• Best at a corner

• Example Eundes gt Edes
• Lowest T gives best selectivity
• Lowest t gives best throughput

• Alternatives
• Highest T gives best rate at cost of selectivity