Focused Ion Beam (FIB) / SEM

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Focused Ion Beam (FIB) / SEM
A technique used primarily in the semiconductor
and materials science fields Site-specific
analysis Deposition Ablation of materials.
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Based on similar technology as SIMS Secondary
Ion Mass Spectrometry (SIMS) is a highly
specialized analytical tool which combines high
spatial resolution and high sensitivity. This
technique uses a highly focused ion beam
(generally oxygen or cesium ions are used for
inorganic samples) which 'sputters' material from
a selected domain on a sample surface. The
'secondary ions' which are ejected from this
sample are passed through a mass spectrometer
which separates the ions according to their
mass/charge ratio, in effect providing a chemical
analysis of a very small sampling volume.
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Beam generation for etching
Galium is deposited around a tungsten tip it
liquifies and begins to emit ions
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Sources used for Imaging, Analyses, or Work
Electron Source
Ion Source
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Etching
Ion beam is used to image and remove material
www.siint.com/en/products/fib
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FIB crossbeam ion beam for etching, E-beam for
imaging
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Etching to form TEM samples
For video of etching in progress http//www.msm.c
am.ac.uk/phase-trans/2005/milling.swf
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FIB Opposing trenches are milled out with the
Ga ion source and a 1-2 µm thin section is left
free standing in the wafer. A side view shows the
depth of the trenches. The section is then
welded to the micro-manipulator, extracted from
the wafer then transferred and welded to a TEM
grid post. Final thinning down to a thickness
of less than 100nm is achieved using low incident
angles and low Ga ion current.
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Sectioning through samples
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Cobalt particle in nucleus of frozen Human
fibroblast nucleus
Stomata guard cells XS of frozen coriander leaf.
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Creating 3D images
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Deposition of materials on substrate
Carbon deposition