Simulation of psDetector Electronics Approaches

1
Simulation of ps-Detector ElectronicsApproaches
PossibilitiesWorkshop on Very Fast
Time-of-Flight Methods, Problems and
ProspectsNovember 18, 2005 University of
Chicago

• Fukun Tang
• Electronics Development Group
• University of Chicago

• Introduction
• Approaches and Possibilities
• Simulations
• Summary

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INTRODUCTION Tube Signal Modeling

• 64 master anode pads per tube
• Signal summed by equal timing traces on a
  single collector
• Mismatched terminations

Anode Pad
Collector
Electronics Board
Buried Vias
Cross-Section of Anode Board
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Tube Output Signal on Collector

• Signal on the tube collector from Tim simulation
• Rising time 25ps
• Pulse width (FWHM) 40ps
• Reflection coefficient -0.98 (RL100 ohms)
• Reflection delay (round trip) 240ps
• Recovery time 75ns (Settled at 1ppm)

25ps
240ps
40ps
75ns_at_1ppm
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Ps-Detector Electronics Requirements
PMT Output Signal
Start
1ns
Reference Clock
Stop
Tw
1ps rms Resolution Time-to-Digital Converter!!!
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Approaches and Posibilities

• Discriminators
• Leading-edge discriminator
• Constant fraction discriminator
• Different types TDCs
• Wilkinson (Mixed)
• Time to Amplitude Converter (TAC) (Analog)
• Direct measurement (Digital)

Historical techniques come back but with latest
technology!
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Approaches Possibilities
From Harolds talk, we will build two Chips for
Tube Readout (1) psFront-end (2) psTransport
Time Stamp Data Buffers
Zero-walk Disc.
11-bit ADC
Data
Driver
Receiver
PMT
TAC
CK0
11-bit 5Ghz Counter
1200 Time Stretcher
1Ghz PLL
5Ghz PLL
CK1
4x1Ghz PLL
Chip1
Chip2
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Simulation Tools

• Spice based Simulators
• (1) Cadence Spectre (analog)
• (2) Mentor Graphic Accusim (analog)
• (3) Cadence Virtuoso (mixed signal)
• (4) Mentor Graphic Eldo, Eldo-RF

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Preliminary Simulation Work
One Simulation Based on Behavioral Model SIM-I
Zero-walk Discriminator Three Simulations Based
on IHP 0.25mm BiCMOS Process

SIM-II Zero-crossing Comparator SIM-III 1200
Time Stretcher SIM-IV Time-to-Amplitude
Converter (TAC)
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Introduction to IHP 0.25mm BiCMOS SiGe Process

• 0.25mm CMOS technology
• NMOS Isat537ma _at_ WxL25x0.28mm2
• PMOS Isat-230ma _at_ WxL25x0.28mm2
• 4 metal layers (Al) and one MIM
  (metal-insulator-metal) layer 1f/mm2
• Current densities
• M1 0.85ma/mm
• M2 1.00ma/mm
• M3 1.00ma/mm
• M4 3.40ma/mm
• Gatepoly 0.25ma/mm
• SiGe based NPN HBT (heterojunction bipolar
  transistor)
• SGC25A ft60Ghz, Ic0.5-63ma
• SGC25B ft120Ghz, Ic0.5-63ma
• SGC25C ft200Ghz, Ic0.5-63ma
• High dielectric stack for RF passive component
• CMOS core voltage 2.5V
• Why we choose this process?
• Very low jitter discriminators
• Very low jitter phase locked loops

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SIM-I Zero-Walk Discriminator Schematics
Tw
Constant Fraction Discriminator
Start
1ns extra-time delay added
Very fast Zero-Crossing voltage Comparator
Stop
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SIM-I Zero-walk Discriminator Behavioral Model
Simulation
10 Input Signals Tr15ps, V7mV to
70mV
0 walk at 0-Crossing
0 50p 100p 150p 200p 250p
Constant fraction attenuator f1/3
Delay line Td20ps Shapes input signal to a
zero-crossing bipolar signal
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SIM-I Zero-walk Discriminator
Behavioral Model Simulation Results
10x amplitude changes (7mv 70mV)
Reflection
Tr15ps
Walk10ps
Leading-Edge Disc. Output
walk0ps
Constant Fraction Disc. Output
Time Interval Latch Output
0
50p
150p 200p 250p 300p 350p 400p 450p
500p
100p
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SIM-II Zero-Crossing Voltage Comparator
Schematics Based on IHP 0.25mm BiCMOS
Process
2 gain Stages, 2 level shifters, A 400
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SIM-II Zero-Cross Comparator
Preliminary Simulation Results

1.56V
0.8V
0 25p
50p 75p
100p
Comparator Outputs _at_ Input Signal 1mV to 10 mV
Sweep (Increment 1mV)
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SIM-II Comparator Simulation Results

• Simulation input signal 1-10mV square pulses.
• Output is fully saturated at 8mV input signal.
• Output swing is 1.6V in differential.
• Skew time less than 2.5ps at 10 time signal size
  changes (full width)
• More comprehensive simulation needed

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SIM-III Wilkinson Type TDC SimulationBipolar
Time Stretcher Functional Block
Ts Tw K Tw p K Isc Isk p
pedestal
Isc200i
Tw
1ns
C
Vc
Tw
Iski
200ns
Ts
CK
EN
Data
CK
5Ghz counter
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SIM-III Bipolar Time Stretcher Schematics
based on IHP 0.25mm BiCMOS Process
i-source and i-sink use Behavioral models Ratio
200
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SIM-III Simulation Result of
Stretched Time Interval vs. Input Time Interval
Stretched time interval output signal
Stretched Time 274ns (pedestal74ns)
1ps Time Interval Input Signal
0 50ns 100ns 150ns 200ns
250ns 300ns
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SIM-III Charge and Discharge Switches Caused
Overshoot and Undershoot on Time Stretcher Output
250mV overshoot
Input Time Signal
1ns
Stretched output Signal
-50mV undershoot
0
2.5ns 5.0ns
7.7ns
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SIM-IV TAC Simulation
Start Vc K Tw p Stop Vc Hold
Reset
RESET
tw2
Tw
tw1
Tw
C
i_sink
vc1
vc2
TAC OUT
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SIM-IV Time-to-Amplitude (TAC) Schematics
Based on IHP 0.25mm BiCMOS Process
Switch Forward Charge Cancellation
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SIM-IV TAC Output vs. Tw 1ns Input
TAC Reset
1ps Time Interval Input
1ns
TAC Voltage Output
Slop -640uV/ps
Vc Hold for ADC
Reset
Ready
TAC
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SIM-IV TAC Simulation Results Sweep Tw
from 1ns to 2ns with 100ps Increment
Tw1ns
Tw2ns
10 Different Tw Inputs
10 TAC Outputs
Vc(1ns)
Vc(2ns)
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SIM-IV TAC Outputs vs. Tw Inputs Sweep Tw
from 1ns to 1.01ns with 1ps Increment
Tw1000ps Tw1001ps Tw1002ps Tw1003ps Tw1004ps
Tw1005ps Tw1006ps Tw1007ps Tw1008ps Tw1009ps
TAC Sensitivity - 640uV/ps
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Wilkinson TDC Vs. TAC-ADC Based on IHP 0.25mm
BiCMOS SiGe Process
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REVIEW OF IC DESIGN TOOLS

• Design Stage Digital Analog
• Behavioral Modeling VHDL, Verilog
  VHDL-AMS, Verilog-AMS
• Behaviroral Simulation Modelsim Spectre,
  Accusim, Eldo
• Synthesis/optization Leonardo ---
• Test Synthesis Synopsys-DC ---
• Schematic Capture Virtuoso Composer
  Virtuoso Composer
• Pre-Layout Simulation/Analysis Unknown
  AnalogArtist (Spectre, Eldo)
• Layout Design Planner
  Virtuoso-XL
• Silicon Ensemble-PKS
• Verification Calibre, XCalibre, Assura
  Calibre, XCalibre, Assura
• Post-Layout Simulation/Analysis Unknown
  AnalogArtist (Spectre, Eldo)

Tools are decided by foundries design kit!
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Conclusion

• Very challenging!
• Both TDCs are very possible to do the job
• Wilkinson Time Stretcher TDC
• TAC-ADC type TDC
• Lots of comprehensive simulations need to be done
  to find the direction to move.
• Processes play the key role to win!

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Forward Charge Injections without Cancellation
Switch
Ready
Reset
TAC
ADC
Reset
Forward Charge Injections
Reset
i_charge
Tc
C
4mv/box
i_discharge
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TAC Value _at_1ps Step
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Forward Charge Injection
Vc(error)(Cd/CCbc)Vd (Pulse Divider!)
I-src
Cd
Vd
C
Tw
i-sink