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MOCVD of Alternative Materials

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Plasma-enhanced MOCVD. ALD. Plasma-assisted ALD. 3. In house capabilities: ... Chamber utilized for deposition or pre/post plasma treatment of films. ... – PowerPoint PPT presentation

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Title: MOCVD of Alternative Materials


1
MOCVD of Alternative Materials
  • Smuruthi Kamepalli
  • Jeff Fournier
  • April 2009

2
Introduction
  • Primarily our effort focuses on Chemical vapor
    deposition of thin films of new materials which
    are conformal in nature and provide the ability
    to fill small pores.
  • Conformal thin films can be utilized in more
    flexible and competitive device structures.
  • MOCVD
  • Plasma-enhanced MOCVD
  • ALD
  • Plasma-assisted ALD

3
In house capabilities
  • Thin film growth - Single wafer multiple chamber
    CVD System
  • State of the art tool capable of accommodating up
    to 8 wafers and incorporates a great deal of
    flexibility to deposit a wide range of materials.
  • MOCVD chamber
  • Chamber utilized for the deposition of barrier
    layers, contacts, and other thin films.
  • Stainless steel Process chamber with water-cooled
    chamber walls
  • Showerhead assembly with temperature controlled
    fluid channel with 3 radial reactant injection
    zones
  • High-speed susceptor rotation
  • Susceptor capable of temperatures up to 800C

4
CVD Cluster Tool
5
Cluster tool with three process chambers
MOCVD chamber PECVD chamber Sputter
etch chamber
6
  • PECVD chamber
  • Chamber utilized for deposition or pre/post
    plasma treatment of films.
  • Water cooled showerhead assembly and heated
    chamber walls.
  • Organometallic precursor sources and delivery
    system
  • System contains dual MO source delivery systems
    to accommodate a total of six MO source
    containers-3-bubbler input and 3 liquid MO
    sources through direct inject. Showerhead
    assembly with temperature controlled fluid
    channel with 3 radial reactant injection zones
  • Non-rate limited ALD type pulsed-deposition
    capability

7
Precursor Chemistry
  • Organometallic Precursors
  • Compounds, which possess direct bonds between
    metal and carbon.
  • The chemistry lab is equipped to perform
    synthesis and characterization of metal-organic
    precursors.

8
Requirements For Precursor
  • High vapor pressure
  • Stable (low contamination)
  • Low decomposition temperature for thermal
    pyrolysis
  • Low thermal stability of precursor
  • Compatibility with other precursors used in
    deposition
  • Stable for storage
  • Easy to synthesize
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