Power GaN Market

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Power GaN Market Global Scenario, Market Size,
Outlook, Trend and Forecast, 2016 2025
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DESCRIPTION- POWER GAN MARKET 
GaN stands for Gallium Nitride. It is a new
technology wide bandgap semiconductor, commonly
used in light-emitting diodes, radio frequency
devices, power electronics, and many other
applications. GaN is projected to be the next-gen
semiconductor for power applications thus gaining
its fame across the world. Its industrial devices
present an advantage with respect to efficiency,
weight, size, and thermal performance. GaN
devices are also very efficient in terms of power
conversion making it suitable for wide array of
applications such as in electric vehicle, IT
telecom, among others. Huge demand in consumer
electronics automotive industries, and adoption
of GaN in radio frequency power electronics are
the key drivers propelling the growth of the
global power GaN market. In addition, growing
application of GaN RF power device in defense,
military, and aerospace have also boosted the
market growth. However, high material and
fabrication cost, and design complexity are the
major challenges hindering the growth of the
market. Further, swelling implementation of GaN
in electric hybrid electric vehicles, and
acceptance of GaN in 5G infrastructure are likely
to open up several growth opportunities for the
market in the forthcoming years. Browse Complete
Report _at_ https//www.variantmarketresearch.com/rep
ort-categories/semiconductor-electronics/power-gan
-market
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POWER GAN MARKET 
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POWER GAN MARKET 
Device, industry vertical, and geography are the
major segments considered in the global power GaN
market. By device, the market includes GaN power
ICs, GaN power discrete devices, and GaN power
modules. The industry vertical segment is further
bifurcated into aerospace defense, consumer
electronics, automotive, IT telecommunication,
and other industry verticals. On the basis of
geographical analysis, the global power GaN is
segmented into North America, Europe,
Asia-Pacific, and Rest of the World (RoW). North
America is further bifurcated in U.S., Canada,
and Mexico whereas Europe consists of UK, Russia,
Germany, France, Italy, and Rest of Europe.
Asia-Pacific is segmented into India, China,
Japan, South Korea and Rest of Asia-Pacific while
RoW is bifurcated into South America, Middle
East, and Africa. Get Sample Report _at_
https//www.variantmarketresearch.com/report-categ
ories/semiconductor-electronics/power-gan-market/s
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The Market Players

• Koninklijke Philips N.V.
• Panasonic Corporation
• Fujitsu
• Mitsubishi Chemical Corporation
• Cree Incorporated
• Toshiba Corporation
• Gan Systems Inc
• Efficient Power Conversion Corporation
• International Quantum Epitaxy Plc
• Infineon Technologies Ag

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The key takeaways from the report

• The report will provide detailed analysis of the
  Global Power GaN Market with respect to major
  segments such as device, industry vertical, and
  geography
• The report will include the qualitative and
  quantitative analysis with market estimation over
  2016 2025 and compound annual growth rate
  (CAGR) between 2017 and 2025
• Comprehensive analysis of market dynamics
  including factors and opportunities will be
  provided in the report
• An exhaustive regional analysis of the Global
  Power GaN Market has been included in the report
• Profile of the key players in the Global Power
  GaN Market will be provided, which include key
  financials, product services, new developments
  and business strategies

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Scope of the Global Power GaN Market

• Device Segments
• GaN Power ICs
• GaN Power Discrete Devices
• GaN Power ICs

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Scope of the Global Power GaN Market

• Industry Vertical Segments
• Aerospace Defense
• Consumer Electronics
• Automotive
• IT Telecommunication
• Other Industry Verticals

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