Semiconductor Wafer at Ganwafer

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WELCOME TO GANWAFER.COM
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FZ Silicon Wafer
The FZ Wafer is prepared by float zone melting
single crystal growth technology are important
single crystal silicon. Because of no crucible,
the pollution from crucible is avoided, and the
suspension zone melting can be used for multiple
purification, so the purity of single crystal is
high, and the FZ-Silicon conductivity is usually
above 1000 O-cm. Used for making power electronic
devices, photodiodes, ray detectors, infrared
detectors, etc. Visit our website for more
information GANWAFER.
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CZ Silicon Wafer
CZ silicon wafer is grown by Czochralski method,
which is the mainstream technology for
monocrystalline silicon growth with low cost
established in the 1950s. In Czochralski method,
the raw polysilicon block is put into a quartz
crucible, heated and melted in a single crystal
furnace, and then a rod-shaped seed (seed
crystal) with a diameter of only 10 mm is
immersed in the melt. 
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Thin film deposition and metallization on silicon
wafers
Thin film deposition and metallization on silicon
wafers. We provide a large range of thin films
and metallization in order to propose not only a
abstract but a complete solution, including.
Metal coating on silicon wafers or layer
deposition on silicon wafers by LPCVD, PECVD, PVD
or evaporation. Know more CLICK.
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Wet or Dry Thermal Oxide Silicon Wafers
PAM-XIAMEN Offer Wet or Dry Thermal Oxide/Dioxide
(SiSiO2) Silicon Wafers, available size is 4,6
and 12. Thermal oxide wafer or silicon dioxide
wafer is a bare silicon wafer with silicon oxide
layer grown by dry or wet oxidation process. It
is very important to grow a high quality oxide
layer on the surface of silicon wafer for the
whole semiconductor integrated circuit
manufacturing process.
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Xiamen Powerway Advanced Material Co.,
Ltd Address Henghui Business Center,No.77,Lingxi
a Nan Road, High Technology Zone, Huli, Xiamen,
Fujian, 361006 China Call 86-592-5601 404 Fax
86-592-5563 272 Email tech_at_powerwaywafer.com Web
site http//www.ganwafer.com/