Fabrication of PN junction diode

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• ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY
  SCIENCES(A)Department of Electronics and
  Communication Engineering
• ECE 125 Basic Electronics Engineering

• Academic year 2022-23
• Class Section 1/4 ECE-A
• Name of the Faculty Mr.D.Anil Prasad

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UNIT-I(Semiconductor Diodes)

• Fermi level in Intrinsic Extrinsic
  semiconductors. Mass-Action law. Mobility and
  conductivity, Hall effect, Generation and
  recombination of charges, Drift and diffusion
  current, Band structure of open-circuit p-n
  junction, V-I characteristics, transition and
  diffusion capacitance, reverse recovery time,
  Avalanche and zener breakdown, zener diodes,
  Light Emitting Diodes.

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PN junction fabrication

• Step1 start with n substrate with n epitaxial
  layer grown on top

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PN junction fabrication

• Step2 Deposit Sio2

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PN junction fabrication

• Step3 Apply Photo resist

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PN junction fabrication

• Step4 Place mask

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PN junction fabrication

• Step5 Expose to UV light

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PN junction fabrication

• Step6 Remove mask

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PN junction fabrication

• Step7 Develop photo resist

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PN junction fabrication

• Step8 Etch oxide (in HF)

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PN junction fabrication

• Step9 Remove photo resist

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PN junction fabrication

• Step10 Perform diffusion of Boron

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PN junction fabrication

• Step11 Add metal contacts

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PN junction fabrication

• Step12 PN junction formation

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Thank you

• for listening