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Bez nadpisu

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V.Havr nek - New 3MV Tandetron Laboratory at NPI Rez. SSAF Aghios Nikolaos, ... target chamber is equipped with fine goniometer with five degrees of freedom (x, ... – PowerPoint PPT presentation

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Title: Bez nadpisu


1
New Tandetron Laboratory at NPI Vladimír
Havránek, Vladimír Hnatowicz, Anna
Macková,Vratislav Perina, Jirí Vacík, Václav
Vosecek, Jirí Novotný, Jirí Bocan Nuclear
Physics Institute ASCR, 250 68 Rež u Prahy
2
Important Milestones
  • 1964 3.5(5)MV Van de Graaff started operate
  • 2005 3MV Tandetron 4130MC from HVEE installed
    (supported by IAEA and ASCR)

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Odkrytý 1985

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Ion lines at the old VdG accelerator
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New experinmental target chamber for simultaneous
IBA
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  • Present-day research activities at VdG
  • Investigation of thin surface layers and
    multilayers with distinctive mechanical,
    electrical, magnetical, optical, chemical and
    biological properties, proceses of its
    fabrication
  • Atmospherical and combustion aerosols research,
    testing of new reference materials, analysis of
    biological and environmental samples
  • Comercial, industry and technological research
    activities

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VdG 2004
10
Construction of the new Tandetron hall autumn
2004
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Tandetron hall summer 2005
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Transport of Tandetron into new hall 1.9.2005
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November 2005
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Experimental lines
  • Ion Channeling RBS (NEC) 2006 (-30deg)
  • High Energy Implantation line RBS TOF ERDA
    (NEC, HVEE, Vacuum Praha, INP) 2006 (-10deg)
  • Multipurpose for Simultaneous PIXE, PIGE, RBS,
    PESA and other Experimets (Vacuum Praha, INP)
    2007 (30deg)
  • Ion Microprobe (Oxford Microbeams) 2008
    (10deg)

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High Energy Implantation Line
  • Carrousel for 12 samples of 2,5 inch in diameter.
  • Step motor control of the carrousel movement
  • Maximum energy 2.5MeV per charge state.
  • For Si4 it is 10MeV, for H 2.5MeV. The lowest
    available energy is about 300keV
  • The typical implanted doses range from 1x108 to
    1x1016 ions/cm2.

30
Some examples of implanted ions
Ion Energy keV Dose at/cm2 Substrate Time to complete
H 300 1x1014 Si 1h 40m
H 2500 5x1010 Si 30s
H 2500 1x1014 Polyaniline 36 m
Au 1700 1x1016 Glass 16 h
Au 2 3000 1x1016 Si 2.5 h
O 2000 1x1014 PEEK 1 h
Si 5 12000 1x109 PET 2 s
Small scan area
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RBS-Channeling
The RBS-Channelling setup is only equipment which
was fully supplied by external vendor. It was
bought from NEC company USA and recently
installed at -30 deg. beam line. The target
chamber is equipped with fine goniometer with
five degrees of freedom (x,y,z,?,?) and two
charge particle detectors. Test experiments are
now in progress. There is also a possibility to
add additional x or ?-ray detector, so the PIXE
or PIGE channelling experiments can be performed
in future. The setup will be used for routine
RBS-channelling and RBS measurements.
Channeling software
33
Proposed microbeam line
34
Thank you for your attention
Vltava River in Rez
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