3 MV Tandetron based FRENA

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3 MV Tandetron based FRENA
FRENA Facility for Research in Nuclear
Astrophysics SAHA INSTITUTE OF NUCLEAR
PHYSICS February 19, 2008
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Outline

• HVE Product range
• HVE Installed base
• HVE Tandetrons
• Features
• Performance
• 3 MV Tandetron based FRENA
• System Characteristics
• System Layout
• System performance

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Product range

• Ion accelerator systems
• Air insulated up to 500 kV
• Singletron single-ended accelerators up to incl.
  6.0 MV/TV
• Tandetron tandem accelerators up to incl. 6.0
  MV/TV
• Ion implanters
• Beam energies 10 keV 60 MeV and higher
• Beam power up to 25 kW
• Electron accelerators
• Beam energies up to 6.0 MeV
• Beam power up to 50 kW

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Product range

• Systems for Ion Beam Analysis
• Rutherford Backscattering Spectroscopy (RBS)
• Particle Induced X-ray Emission (PIXE)
• Nuclear Reaction Analysis (NRA)
• Elastic Recoil Detection (ERD)
• Medium Energy Ion-scattering Spectroscopy (MEIS)
• Accelerator Mass Spectrometers (AMS)
• Systems for Nano- and Micro-beam applications
• Neutron generators
• DC and Pulsed beam systems

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Installed base

• HVE installed base
• Research Market
• Worldwide over 500 systems sold
• Americas over 200 systems sold
• Europe over 240 systems sold
• Far East over 50 systems sold
• Industrial Market
• Worldwide over 100 systems sold

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Installed base
3.0 MV T-Shape Tandetron accelerator system for
IBA / IBMPorte Allegre, Brazil
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Installed base
5.0 MV Coaxial High Current Tandetron for IBA /
IBMUAM Madrid, Spain
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Installed base
3.5 MV In-line Singletron for nano-probe
applicationsGradignan, France
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Installed base
3.5 MV Coaxial Singletron for IBACatania, Italy
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Installed base
1.0 MV multi-element AMS systemCNA, Sevilla,
Spain
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Installed base
5.0 MV multi-element AMS systemAix-en-Provence,
France
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Installed base
500 kV Air insulated acceleratorKunming, China
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Installed base
1.25 MV Coaxial High Current TandetronHamilton,
Canada
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Installed base
1.25 MV Coaxila High Current Tandetron based Ion
ImplanterIndustry (Confidential) Reliabilty and
up-time are key requirements
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Tandetron - Features

• Accelerator tubes

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Tandetron - Features

• Unique all-solid-state HV power supply

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Tandetron FeaturesHV Power supplyClose match
between Design Performance
Measurement of the coupling factor
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Tandetron Control System

• Computer control system
• Hardware
• Industrial PC type computer interfaced via fibre
  optic isolated
• Control Area Network (CAN) to local micro
  controllers
• Software
• Operating system Microsoft Windows XP
• Program language C-Sharp

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Tandetron Software Features

• User interface

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Tandetron Software Features

• Magnet calculation Automatic setting of magnet
• current on entry of desired ion mass, charge
  state
• and, where applicable, magnet exit port

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Tandetron Software Features

• System diagnostics
• Logging Continuous logging of all I/Os
• Trending Continuous trending of up to 5 readouts
  as
• a function of time

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Tandetron Software Features

• Tracing Display of up to 5 readouts as a
  function of
• a scan of 1 specific analog
  control

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Tandetron Software Features

• Mapping Display of 1 parameter during a two
  dimensional scan of 2 independent
  controls e.g
• Beam current in Q-snout Faraday cup as a
  function
• of injector Einzellens and magnet
  parameters

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Tandetron Software Features

• Beam monitoring Computer screen display of
• Beam profiles in X and Y
• Beam cross section with beam intensity
  distribution

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Tandetron Software Features

• Vacuum system Control and status overview of
• valves, pumps and vacuum levels

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Tandetron Software Features

• System interlocking
• Potentially dangerous user actions are hindered
• Automatically appearing dialog boxes upon
  interlock
• triggering
• Passport protected interlock overriding
• System automatically put to save mode after
  electric
• power failure

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Tandetron PerformanceBeam power capability25
kW all-solid-state RF driver
All-solid-state RF driver connected to a 2.0 MV
Tandetron with a bank of heating elements in
series dissipating a total of 28 kW.

• Features
• All-solid-state design
• Fast transient response
• Low ripple and high stability (10-5 range)
• Soft-switching topology for 96 efficiency

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Tandetron PerformanceBeam power and
definition F-cup failure
0.5mm Ta brazed on 16mm cooled Cu
800µA H at 4MeV within 1mm2 ? Melted Tantalum
(gt3300K) !! Average brightnes 22 pA/ µm2 mr2
MeV ! (half angle 3mrad) Core brightness
100 pA/ µm2 mr2 MeV !?!
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Tandetron PerformanceTerminal Voltage Ripple
(3.5 MV Singletron)
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Tandetron PerformanceTerminal voltage ripple
(5 MV Tandetron)
Terminal voltage ripple

• TV 100 - 800 kV lt10 VRMS .
• TV 800 - 5000 kV lt 10-5 (RMS).

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Tandetron PerformanceTransient response (5 MV
Tandetron)

• Prompt injection of Si- at 3 MV, total beam load
  gt 1 kW
• Maximum terminal undershoot of 4.2 kV or 1.4 .
• Recovery within 50 ms to within 0.3 of the set
  value
• after a prompt injection of 1 kW beam.

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Tandetron PerformanceTransient response (2 MV
Tandetron)

• Prompt injection of 0.9 mA H- at 2 MV, total beam
  load gt 3.5kW
• Maximum terminal voltage undershoot of 10 kV
  or 5 .
• Recovery within 60 ms to within 0.5 of the set
  value
• after a prompt injection of 4 kW beam.

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Tandetron PerformanceEnergy stability (3.5 MV
Singletron)Measured using Li(p,n) reaction at
1.881 MeV
Estimated stability /- 50eV over 5h, but
anticipated to be as good as /- 20eV (i.e.
10-5) observing the period 0.5 lt t lt 3.5h.
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3 MV Tandetron based FRENA Overall System
Characteristics

• Wide energy range
• High currents of Light and heavy ions
• Extreme high stability and energy resolution
• Continuous operation
• Pulsed beam applications
• Dedicated software
• to cope with high-power (gt2 kW) ion beams

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Layout Overall System
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Layout - Heavy ion Injector

• Ion source body at
• ground potential
• 50 (200) samples
• in one carousel load
• Unattented operation
• Small emittance for
• high transmission
• at low energy
• Provisions for
• future extension for
• heavy-ion bunching

Heavy ion sputter source model SO-110
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Layout - Light Ion Injector

• Dual source injector
• Multicusp for H D
• with direct negative extraction
• ( 700 uA H-)
• Multicusp for He
• with Lithium Charge Exchange
• ( 10 mA He ? 100 uA He-)
• Patented Chopper-Buncher system

Single source injector with SO-120 Multicusp ion
source
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Layout - Multi-deflector Chopper Pulsed neutron
facility, CEA Cadarache, France
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Layout - Multi-deflector Chopper US patent
7,244,952

• Characteristics
• 1st and 2nd corrector steerer units
• Features
• DE dominated by Ion source (5-10eV)
• Beam intensity modulation only
• Beam stable in angle and position
• Reduced effective beam size
• (increases system transmission)

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Performance - Multi-deflector Chopper Pulsed
neutron facility, CEA Cadarache, France
Beam current at target (A.U.)
Time in ns
Rise time 10 ns Flat top injection
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Performance - Pulsed Beam Operation Pulsed
neutron facility, CEA Cadarache, France

• Pulse width at target for 2 MeV H
• Measurement resolution 300 ps
• Measured FWHM 810 ps 630 ps because
  of M4 hole?
• Estimated Pulse-width 550 ps
• Note Pulse is free of timing tails!

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Performance - Overall System

• Beam current at target
• H 350 500 uA at 6 MeV (gt 2 kW beam power)
• He2 50 100 uA at 9 MeV
• Usable terminal voltage range 200 3000 kV
• Terminal voltage stability 80 V at 2 MeV
• Pulse repetition frequency adjustable up to 4
  MHz
• Pulse width at target 1-2 ns

Thank you For your attention