Title: R
1R D Work at SMU
- The Test of the GOL chip.
- First test on the SoS driver chip and the
submission of a dedicated test chip for radiation
tests. - Test results of the GSE laser and a 10 GHz VCSEL
. - The SMU group
- Wickham Chen, Ping Gui, Andy T. Liu,
Ryszard Stroynowski, - Annie C. Xiang, John C. Yang, PeiQing
Zhu,, Juheng Zhang, - Jingbo Ye
21 to 2 Gbps serialisers, why GOL
GOL 1.6 Gbps
G-Link 1.25 Gbps
TLK2501 2.5 Gbps
Rad-soft 360 mW
Rad-hard by design, 400 mW LD driver included
Rad-hard Bi-polar, 2.5 W
23.217.2mm22.7mm Price 50/pcs
12.212.2mm21mm
1313mm21.7mm Price 15/pcs
3GOL overview
- GOL overview
- Transmission speed
- Fast 1.6Gbps, 32 bit_at_40MHz
- Slow 0.8Gbps, 16 bit_at_40MHz
- Encoding scheme
- CIMT (ex HDMP-1024)
- 8B/10B (ex TLK2501)
- Program interface
- I2C
- JTAG
- Driver
- Internal laser driver (bias 1 mA to 55 mA in 0.4
mA steps) - 50ohm line driver, minimum 780 mV differential.
- Good for VCSEL and Edge Emitter.
Package 144 pin fpBGA with 1 mm solder-ball
pitch. Dimensions 13 mm sides, 1.68 mm tall.
4GOL architecture
5Previous tests Ref. GOL CERN website
- Total dose effect 10Mrad (x-ray, 10 KeV peak) at
a dose rate of 10.06 Krad(SiO2)/min. No current
increase after the irradiation. - SEU 60 MeV proton, fluence of 31012 p/cm2 at
a flux of 3108p/cm2?sec. No SEU was observed. - Requirements 10 to 100 Mrad and 1015 to
1016p/cm2 fluence. - BER tests in lab better than 1.310-14.
- Power consumption 400 mW.
6Test of the GOL chip
- We plan
- A complete chip characterizing according to the
IEEE Gigabit Ethernet standard. This includes
rise/fall times, eye mask test, jitter studies
(DJ and RJ at all 4 testing points of the link
system, jitter transfer of the GOL), optical
power margin (again in the link system). We did
this for the G-Link for the LAr optical link.
Agilent didnt provide it in the data sheet. - The PLL lock range.
- Probe the total dose limit to see if it reaches
100 Mrad. Measure SEUs at different flux levels,
using 200 MeV proton beams. - Gain experience of using this chip, should it
be suitable to inner detector upgrade.
7System block diagram for in lab test
Pattern/clock generator with jitter input
TP1
TP2
TP3
PC interface
TP4
8System block diagram for irradiation test
2 m away from the beam
Control Room 37 m away
In the beam
RS232
Freq. Counter
GPIB
Prog. V. Source
GPIB
Picoammeter
Test chip Carrier Board 1
PC
Switch Board
Flux
Test Chip Carrier Board 2
USB DIO Card
FPGA Board
GOL Board 1
This design is still in progress and is changing
on daily basis.
TLK Rx
TTL?LVDS
GOL Board 2
TTL?LVDS
TLK Rx
GPIB
Power Supply Board
DMM
9The schedule
System design 1 month
10/1/05
We are here
11/1/05
Schematic capture 1 month
12/1/05
PCB layout 1 month
FPGA code 1.5 month
Labview code 1 month
1/15/05
Board assembly 3 wk
2/15/06
PCB Debug 3 wk
3/1/06
Lab Test 1 month
3/31/06
Irradiation Tests
10Why SoS
- There is no guarantee that GOL can withstand 10
times more radiation than what has been tested. - We do not know if more bandwidth would be needed.
- We are designing a Link-on-Chip ASIC for the LAr
upgrade. This chip may be used for the ID upgrade
as well. - This project has just been started. Here I report
on the first irradiation test and the actions we
take based on the preliminary result.
11The Irradiation of one SoS chip
- A laser driver chip based on 0.5 ?m SoS
technology was irradiated at MGH (230 MeV
proton). - Total dose 116 Mrad.
- Error free at 1.5 krad/sec and up to 17 Mrad. LAr
upgrade okay. - Observed current increase at very high dose rate.
12The SoS test chip
- In CMOS layout, the technique to combat the
leakage current is the enclosed layout transistor
(ELT) and the guard-ring around the transistors.
In SoS, only ELT is needed. - We will use the new 0.25 ?m SoS technology for
the LOC design. In order to probe the total dose
limit, to check ELT on SoS, and to check layout
parameters on design blocks like the PLL, we
submitted a dedicated test chip mid October. - The test of this chip is in preparation (3 slides
back) and the irradiation test is aimed for April
2006.
13The SoS test chip block diagram
- 12X9 transistor array, ELT and standard layout,
NMOS and PMOS with different size.Test layout
techniques and rad-hard limit. - 4 ring oscillators (ELT, std, different
transistor size). Test SEUs. - 5 shift Registers ( various resistors,
majority voting). Test SEUs. - 6 individual gates (ELT and std).
- PLL parts
- Div16
- VCO
- PFD
Many parameters will be measured in lab and in
irradiation. The results will guide us in
designing of the LOC chip.
14The SoS test chip layout
15Looking for E/O devices
- We also started to look for laser diodes. We
tested two surface emitting lasers. One long
wavelength and can couple to single mode fiber,
one VCSEL. The preliminary results are briefly
reported here.
16Test results on the GSE laser
- We exposed 12 Grating-outcoupled Surface-Emitting
laser (1310 nm) - up to 22.3 Mrad at IUCF with 200 MeV proton. The
lasers that - received 11.4 Mrad total dose still pass 2.5 Gbps
eye mask test.
1.8 Mrad Pass.
5.9 Mrad Pass.
22.3 Mrad Fail.
11.4 Mrad Pass.
Group C Group D
17Test results of a 10 GHz VCSEL
- Preliminary test results on the ULM 10 GHz VCSEL
- We irradiated 2 ULM 10 GHz VCSELs at MGH. The
VCSEL were - biased during irradiation. The total dose
received is 116 Mrad. All - DC parameters are still within spec after the
irradiation.
Eye diagram and other AC parameters will be
measured soon.
18Summary
- The GOL test program has been started and is on
track. - We designed and submitted a dedicated SoS test
chip to check out layout techniques and measure
related parameters. The lab and irradiation tests
of this chip is in preparation. - We have tested the GSE lasers and find them
useful in 11 Mrad environment. The GSE lasers can
couple to single mode fibers. The results are
accepted for publishing by Photonics Technology
Letters (PLT). - We have identified a 10 GHz VCSLE and preliminary
test results show potential in use with 100 Mrad.
More tests are on going and more VCSELs will be
tested.