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T'C' Shen, Physics, USU

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... C. Shen, Physics, USU. An epitaxial approach for nanoscale electronics in silicon ... Future applications. Single electron devices. Field-effect transistors ... – PowerPoint PPT presentation

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Title: T'C' Shen, Physics, USU


1
T.-C. Shen, Physics, USU
An epitaxial approach for nanoscale electronics
in silicon
PH3 dose
P delta-layer
Si growth
3D
Si
UHV-H-resist
200 nm
95 nm
Electronics
33 nm
50 nm
Poster P7
2
Why dopant devices?
  • Compatible with current CMOS
  • All epitaxial
  • Low power
  • 3D integration
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