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Mock Paper

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b = 150, CBE = 10 pF, CBC = 4 pF. ... output transistors with a specification of TJmax = 150 C, qJA = 40 C/W, qJC = 1.5 C/W: ... – PowerPoint PPT presentation

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Title: Mock Paper


1
Mock Paper
3. In the circuit of figure 3, the transistors
are identical and have the parameters b 150,
CBE 10 pF, CBC 4 pF.
  • What name is given to the amplifier configuration
    shown in figure 3?
  • Cascode amplifier
  • What is the key advantage of this circuit
    compared with the common-emitter amplifier?
  • Higher upper cut-off frequency

2
(c) Calculate the quiescent base, emitter and
collector voltages for the two transistors and
the collector current of Q1.
Quiescent assumptions IB 0, VBE 0.5 V 24V
dropped across three 100kW resistors, 8V across
each
  • 150, CBE 10 pF, CBC 4 pF.

3
(d) Calculate the mid-band gain, the input
impedance and the output impedance of the circuit.
  • 150, CBE 10 pF, CBC 4 pF.

4
(e) Calculate the lower and upper cut-off
frequencies of the amplifier for a source
impedance of 1 kW.
Lower cut-off
  • 150, CBE 10 pF, CBC 4 pF.

5
(e) Calculate the lower and upper cut-off
frequencies of the amplifier for a source
impedance of 1 kW.
Upper cut-off
  • 150, CBE 10 pF, CBC 4 pF.

6
In the circuit shown in figure 4, assume that
the forward biased diode voltage is 0.5
V. (f) Calculate the thermal noise voltage that
appears across the resistor in terms of V/ÖHz
T 300 K k 1.3810-23 J/K q 1.610-19 C
7
(g) Calculate the additional noise voltage that
appears across the resistor due to shot noise in
the diode current (again in V/ÖHz). Hence
calculate the total noise voltage across the
resistor.
T 300 K k 1.3810-23 J/K q 1.610-19 C
8
4 The total maximum power dissipation of a
class-B power amplifier is calculated to be 15 W.
Given output transistors with a specification of
TJmax 150 C, qJA 40 C/W, qJC 1.5
C/W i. Calculate the power dissipated by each
output transistor.
ii. Calculate the minimum specifications for
heatsinks that could be used for each transistor.
iii. Calculate the minimum specification for a
single heatsink that could be used by both
transistors.
Single heatsink must be twice the specification
9
  • (b) In a common-emitter amplifier
  • Explain why the base-collector capacitance of the
    transistor usually has the most influence over
    the upper cut-off frequency of the amplifier.
  • In a common-emitter amplifier, the
    base-collector capacitance is multiplied by the
    amplifier gain (plus one) due to the Miller
    effect. Consequently, it would usually appear to
    be an order of magnitude larger than the
    base-emitter capacitance
  • Suggest three ways in which the upper cut-off
    frequency of an amplifier can be increased.
  • Decrease the gain (reduces Miller effect)
  • Use a transistor with lower junction
    capacitances
  • Adopt a cascode configuration

10
(c) Explain, using supporting diagrams, how
generalised impedance converter(s) can be used to
simulate i. A grounded inductance
i.e. the circuit has the same input impedance as
an inductance of CR2 Henries
11
(c) Explain, using supporting diagrams, how
generalised impedance converter(s) can be used to
simulate ii. A floating inductance
Again, the circuit has the same impedance as an
inductance of CR2 Henries
12
(c) Explain, using supporting diagrams, how
generalised impedance converter(s) can be used to
simulate iii. A frequency dependent negative
resistance
i.e. a frequency dependant negative resistance
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