NIRT: Molecular Sensing and Actuation by CMOS Nonvolatile

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NIRT Molecular Sensing and Actuation by CMOS
Nonvolatile Charges with Independently Addressed
Nanoscale Resolution Edwin C. Kan, F. A.
Escebeo, A. Lal, J. R. Engstrom and D. A.
Kyser Cornell University, Ithaca, NY
Motivation
Protein Adsorption Detection
Single-Electron Control at RT
Conventional Nanostructure Approach Space Holder
Bulk Potential
Nanocrystal
Electrolyte Diffusive Layer (25Å) second
component of Gouy-Chapman-Stern model. ergt78
Molecules, cells and nano-engineered structures
are all immerged in biochemical fluids.
Cdiff
Initial memory window
Anthrax pores (from Public Health Library)
Electrolyte Double Layer (5Å) first component
of Gouy-Chapman-Stern model. ergt78
CEDL
ttop
Pd
Pd
SWCNT
Short-term single-electron sensitivity
Streptavidin (2-19Å) analyte protein for
capture. Thickness increases as binding occurs.
Assume er10
Cstrep
SiO2
CBSA
Biotinylated BSA (11Å). er10
Drain Current (A)
C3-GPS
Gold nanoshells (from N. Halas, Rice)
p Si
3-GPS (14Å) er11.8
Coxide
Native Oxide (26Å). er4.0
Long-term memory window
T300K
Functionalized SWNT (from H. Dai, Stanford)

• Features
• 100 CMOS integration
• Specificity by sensing gate coating pressure,
  proteins
• Nonlinear response high sensitivity and large
  range
• Noninvasive no need of analyte reference
  electrode

Examples of nano-engineered structures to build
interface between molecules and inorganic
devices. Notice that molecular selectivity is
still provided by attached organic active ends.
Control Gate
C60
Control Gate Voltage (V)
Our Unique Approach

• Applications
• In vivo sensing
• Monitoring cell events
• Specific protein sensing
• Sensor network

Sensing Channel
Drain
Source
DFT calculation
Charge surface of cytochrome B562 Blue anion
red cation yellow h-bond white neutral.
Molecular structure of cytochrome B562 as an
illustration
-0.55V
-0.65V
-1.69V
-1.77V
The basic device structures for nano-scale
molecular interactions based on electrostatic
attractive and repulsive forces by CMOS
nonvolatile charges.
-3.27V
-3.31V
-3.36V
Cell A431 Sensing EGFR
Floating-Gate-Based Sensors
Molecular Simulation
A431 Poly-l-Lysine Sensing gate Floating gate
VGS
Atomistic
ID
Calcein staining to monitor cell life
A431 fluorescence image 15 mins after adding EGF
A431 fluorescence image 3 mins after adding EGF
A431 SEM after critical point dry

• Wafer-binding/PDMS microfluidic
• Detection up to 1nA/1µs pulses
• Wierner Signal equalization

Cell moves to p-l-lysine
DMEM/FBS Stablize
Cell surface seals
Cell immob-ilize
EGF inter-action
(1)
(2)
(3)
(4)
(5)
Ag/AgCl Electrode
C?MOS
Pt Electrode
A generalized ensemble of M independent replicas
are simulated using hybrid MC in which MD
trajectories are carried out using CHARMM.
VGS 10V VDS 5V
CMOS Transistor
Coarse Grain
Microfluidic Chamber
Sensing Gates
Voltage Pulse Generator
Sensing Gate
Id Wiener equalization
Real-time C?MOS monitoring of a single A431 cell
on the sensing gate coated with poly-l-lysine.
A431 is added to the DMEM in 10 FBS media
solution after the surface is stabilized (1).
The cell moves to the poly-l-lysine (2), seals
(3) and immobilizes (4). EGF is then added (5),
where receptor interaction is confirmed with
fluorescence images. Cell life is monitored on
the witness sample going through the same process
by calcein staining.
(a) Main-chain atoms of the llama HC-V domain
solved by X-ray diffraction Spinelly96. The
loops are shown as gray lines and proximal
framework regions as black lines. (b) Schematic
diagram of the simulation box for entropic
trapping of DNA.
Id Averaged
Input