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Title: Talk


1
DEPFET Technology for future colliders
Carlos Mariñas IFIC-Valencia (Spain)
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2
  • DEPFET (DEpleted P-channel Field Effect
    Transistor) Technology invented by J. Kemmer
    G. Lutz, 1987
  • J. Kemmer and G. Lutz ''New semiconductor
    detector concepts'', Nucl. Instr. Meth. A 253
    (1987) 365-377
  • Several different applications for Astrophysics
    and Particle Physics
  • XEUS Future european X-ray observatory to
    investigate the Early Evolution Stages of the
    Universe (early black holes, evolution of
    galaxies)
  • BepiColombo ESA project to Mercury to
    investigate the origin and evolution of the
    planet
  • X-FEL
  • ILC
  • BELLE-II ? Technology chosen for the new Vertex
    Detector

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Why this technology?
  • Vertexing in future colliders requires excellent
    vertex reconstruction and efficient heavy quark
    flavour tagging
  • See Prof. Ch. Damerells talk
  • This requirements impose unprecedented
    constraints on the detector
  • High granularity to cope with the high density
    of tracks in the jets and the background
  • High spatial resolution per layer lt4mm (pixel
    size of 25x25mm2)
  • Fast read-out
  • Low material budget lt0.1X0/layer (100mm of
    Si)
  • Low power consumption
  • DEPFET
  • Measurements made on realistic DEPFET prototypes
    have demonstrated that the concept is one of the
    principal candidates to meet these challenging
    requirements

3
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The DEPFET principle
  • Each pixel is a p-channel FET on a completely
    depleted bulk (sideward depletion). Charge is
    collected by drift
  • A deep n-implant creates a potential minimum for
    electrons under the gate (internal gate)
  • Signal electrons accumulate in the internal gate
    and modulate the transistor current (gq500pA/e-)
  • Accumulated charge can be removed by a clear
    contact
  • Small pixel size 25µm
  • r/o per row 50ns (20MHz) (drain)?Fully depleted
    bulk
  • Noise100e-?Small capacitance and first in-pixel
    amplification
  • Thin Detectors50µm
  • Internal amplification
  • Low power consumption Readout on demand
    (Sensitive all the time, even in OFF state)

GOAL
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DEPFET-Principle of Operation
Potential distribution
internal Gate
1µm
Backcontact
Drain
50 µm
Source
TeSCA-Simulation
FET-Transistor integrated in every pixel (first
amplification) Electrons are collected in
internal gate and modulate the
transistor-current Signal charge removed via
clear contact
5
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DEPFET-Principle of Operation
Potential distribution
internal Gate
1µm
Backcontact
Drain
50 µm
Source
TeSCA-Simulation
FET-Transistor integrated in every pixel (first
amplification) Electrons are collected in
internal gate and modulate the
transistor-current Signal charge removed via
clear contact
7
ILC prototype system
  • Hybrid Board
  • DEPFET 64x256 matrix
  • Readout chip (CURO)
  • Steering chips (Switchers)
  • Protection Board
  • Regulators
  • Readout Board
  • 16 bit ADCs?Digitization
  • XILINX FPGA?Chip config. and synchronization
    during DAQ
  • 128 kB RAM?Data storage
  • USB 2.0 board?PC comm.

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Hybrid board
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Operation mode Row wise readout
  • Row wise r/o (Rolling Shutter)
  • Select row with external gate, read current,
    clear DEPFET, read current again ? The difference
    is the signal
  • Low power consumption Only one row active at a
    time Readout on demand (Sensitive all the time,
    even in OFF state)
  • Two different auxiliary chips needed (Switchers)
  • Limited frame rate

Drain
Enable row Read current (Isig Iped) Clear
Read current (Iped), Subtract Move to next row
8
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DEPFET Concept for a half ILC module
  • 10 and 25 cm long ladders read out at the ends
  • 24 micron pixel
  • design goal 0.1 X0 per layer in the sensitive
    region

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Thinning mechanical samples
6 wafer with diodes and large mechanical samples
Thinned area 10cm x 1.2 cm (ILC vertex detector
dummy)
Possibility to structure handling frame (reduce
material, keep stiffness)
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DEPFET achievements Test Beam Setup
x
  • Telescope
  • 5 DEPFET planes
  • 32x24µm2
  • CCG
  • 450 µm thick
  • DUT
  • 1 DEPFET modules
  • Various pixel sizes
  • 450 µm thick
  • Scintillators
  • 1 Big Beam finder
  • 1 Finger Beam allignment
  • Triggering

Trigger Synchronization via TLU (Trigger Logic
Unit)
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Test Beam Setup
  • General view
  • 6 Modules at once
  • 1 rotating module

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My work
  • Calibration/optimization of different
    generations of matrices
  • PXD4-Clocked Cleargate. 128x64 pixels
  • PXD5-Common Cleargate. 128x64 pixels
  • PXD5-Capacitative Coupled Cleargate. 256x64
    pixels

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  • Test Beam
  • Data analysis (SNR, Residuals, Charge collection
    uniformity)

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  • Mechanical/Thermal measurements and simulation
    (Finite Element An.)
  • Natural frequencies, self weigth bowing,
    deformations
  • Conduction, convection, thermal stress
  • Power cycling
  • Thermal characterization of different materials
    for cooling (Al, Cu, TPG)

Natural convection
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Thank you very much!
Belle-II, SuperB, ILC, CLIC
The LHC is not the end but just the beginning!
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