DELILA

1

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference. Aim and Objectives The main
aim of DELILA is the development and application
of multiple beam interference lithography
technology for nanoscale 2D and 3D structuring of
materials in nano photonics, electronics, and
fabrication. The project has three objectives
1- Fundamental exploration of multiple beam
interference lithography and its capabilities.
This includes the conclusions on the formation of
multiple beam interference patterns for
nanolithography, interaction with different
materials and boundary conditions, and
environmental effects on the performance of
interference lithography. 2- Development of
computer software for the analysis of
interference of several coherent beams of laser
radiation and for the calculation of the results
of diffraction of the radiation by periodic
structures of different forms. This will lead to
the synthesis and optimization of laser-beam
characteristics for obtaining the required
parameters of the created structures.
2

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
3- Development of the DELILA system. The main
outcome of the project will be a nanofabrication
tool that has the potential to create a
breakthrough in nanolithography technology for
both 2D and 3D structuring of materials.
There are two main goals for the IAP 1. Study
of new capabilities for modification of materials
under conditions of realization of nonlinear
mechanisms 2. Realization of conditions for
reducing the cost of creating periodic and
quasi-periodic structures which have already
found wide application in optics, electronics ,
and biomedicine. In accordance with these
goals, the IAP presents the following report.
3

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
Pulse Interference Lithoraphy A promising
Method for Creating Nanoscale Structures for
Optics, Electronics, and Biomedicine. 

• Plan
• Introduction
• Laser stimulation of self-organization of
  two-dimensional periodic quantum-size islands on
  the surfaces of epitaxial InGaAs/GaAs films as
  well as Si and GaAs single crystals.
• 2. Study of conditions for realization of
  deeply porous, polycrystalline TiO2 films.
• 3. Creation of structures with spatially
  varied period.
• 4. Creation of phase masks and antireflection
  structures on fused quartz.
• 5. Creation of antireflection structures on
  Si.

4

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
Introduction. In this method, several
coherent beams, which interfere on the processed
surface, are employed in this method as the
radiation for modification of materials. This
permits one to localize laser energy into a large
set of regions with sizes up to one-quarter of
the wavelength and a period of up to one-half of
the wavelength of the laser radiation. At the
IAP, we use a pulse XeCl laser with 308-nm
wavelength, which localizes energy into sizes
less than 100 nm with a period of less than 200
nm. In what follows we show a plot for the case
of four-beam interference.
5

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
6

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
Laser stimulation of self-organization
of two-dimensional periodic quantum-size islands
on the surface of epitaxial InGaAs/GaAs films as
well as Si and GaAs single crystals.
The next plot shows an AFM image of parts of an
epitaxial InxGa1-xAs/GaAs film after the laser
radiation effect.
7

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
This separate region of heating has sizes about
200nm. Many islands with sizes 10nm and
separated by distances of about 30-50nm arose
inside this region. All this agrees well with
the understanding of the physical pattern of the
radiation interaction processes, according to
which the material of the film moves in the field
of surface stresses that take place on epitaxial
films and single crystals.
8

DELILA Development of
Lithography Technology for Nanoscale
Structuring of Materials using Laser
Beam Interference.
Structures on silicon, which were obtained after
the irradiation by four coherent beams of UV
radiation. The width of the hills is 40nm and
their height is 2nm. The width of the dips is
25nm and their depth is 3nm.