Step and Stamp Imprint Lithography SSIL

1
Step and Stamp Imprint Lithography SSIL

• sequential patterning method, where master stamp
  (e.g. Si) is pressed repeatedly onto a polymer
  resin
• process parameters depend on the polymer used
• capable of patterning sub 100 nm features
  (aspect ratio 21)
• suitable for e.g. resist mold fabrication (used
  for Ni stamp fabrication)

2
NPS300 at VTT
SUSS NPS300

• Aligned Hot Cold Embossing
• Step Repeat mode
• KEY FEATURES
• Sub-20 nm embossing capability
• Sub micron (250 nm) stamp-to-wafer alignment
• Template / Stamp size up to 100 mm
• Substrate up to diameter 200mm (300mm option)
• Pre-leveling accuracy 20 µradian
• Self leveling by flexure stage during
  application of the imprinting force
• Typical dry cycle time lt 1 minute
• Includes alignment and contact, process not
  included

NPS300 in the VTT Microelectronics Clean Room