MULTITECH Ltd'

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MULTITECH Ltd.
Multitech Ltd. was established in 1991. The
company is headquartered in St.-Petersburg,
Russia. We develop and manufacture high
technology laser systems and provide contract
RD. Our company has facilities for experimental
and development work and manufacturing in the
field of laser optics and electronics. Our
specialists design and produce complex custom
designed laser systems for research and
technology.
LASER POWER SUPPLIES AND ELECTRONICS LASER
HEADS AND CUSTOM LASER SYSTEMS HIGH-PERFOMANCE
CHILLERS LIDARS TECHNOLOGICAL WORKSTATIONS FOR
LASER MICROMACHINING LASER PRECISE PROCESSING
OF WIDE RANGE OF MATERIALS
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HB LED Market Intense growth
HB LED market in 2005
HB LED market in 2002
By 2010 the market for high-brightness LEDs
(HB-LEDs) will enter a new phase of its
evolution, according to a new report published
jointly by industry research firms NanoMarkets
and CIR. The market for standard HB-LEDs and the
new ultra-high brightness LEDs (UHB-LEDs) will
grow from 5.0 billion in 2006 to 10.8 billion
in 2010 and reach 17.4 billion in 2013. Laser
Focus World, June, 2006
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Efficacy evolution of InGaAlP and InGaNLED-chips
in the last decade. a) InGaN blue, b) InGaN
green
D. Eissler, S. Illek, G. Bogner, LED Technology
Trends
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How to manufacture HB LED Production Stages
Epitaxialiy growth of GaN, AlGaN,AlGaInP or
similar layers using MOCVD method (metal organic
chemical vapor deposition)
Substrate (Sapphire,SiC)
Substrate etching
Hard mask deposition and etching
Etching of GaN, AlGaN etc.
Contact metallisation
Passivation deposition
Device isolation etch
Create hard mask for device isolation etch
Dicing of wafer to separate chips
Packaging of chips
LED
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Sapphire Dicing Conventional ways

• Diamond saw scribing
• Shortcomings
• Low die yield
• Low throughput
• High operation costs
• Short instrument life
• Sensitive to wafer flatness
• Labour-intensive process
• Low depth of cutting line
• Surface contamination

• Diamond saw dicing
• Shortcomings
• Low die yield
• Low throughput
• High operation costs
• Short instrument life (typically one blade per
  wafer)
• Sensitive to wafer flatness
• Labour-intensive process
• Surface contamination

• UV Laser ablation scribing (Tripled NdYAG,
  excimer laser)
• Shortcomings
• Low depth of cutting line
• Limited thickness of diced wafer (typically 100
  mm)
• Needs for additional mechanical tool for final
  breaking
• UV radiation causes degradation of semiconductor
  structure
• Needs protective films to avoid surface
  contamination

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Innovative method for sapphire substrate dicing
Intrascribe

• Intrascribe free of conventional method
  shortcomings

Main features Low operation costs High
throughput High yield of good chips
(96-98) High cutting precision and edge
quality Small and uniform cutting
line Processing from front side or from back
side, which allows on-the-fly adjusting the
quality of dice edges (the zone of breaking does
not exceed 15-25 mm along whole thickness of
material). Free of surface evaporation Free of
semiconductor structure contamination No damage
of protective films or covers Rough cut surface
(reducing total reflection effect in diode
structures) Laser wavelength cannot cause damage
or degradation of semiconductor structure Free
of any thermal detriments or thermal
stresses High thickness wafer (up to 500 mm) to
process High longevity of tools Low-power laser
(1 class of laser radiation danger) does not
require special protection.
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Innovative method Intrascribe

• Workstation features
• Full computer control
• TV-microscopic system to control operations
• Laser type low-power pulsed DPSS
• Wavelength 532 nm
• Repetition rate up to 10 kHz
• Average power up to 1W
• Precise stepper
• Maximal speed 9.5 mm/s
• Minimal speed 0.5 mm/s
• X-Y positioning accuracy 2.5 mm
• Z-axis accuracy 1 mm
• Rotational accuracy 0.01O

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Innovative method Intrascribe

• Workstation features

Precise positioning (stepper) system. The stepper
has two horizontal orthogonal coordinates with
2.5 mm precision, one vertical coordinate with
positioning precision 1 mm and rotation stage for
orientation of a sample in horizontal plane
The video microscope system is connected with
control computer, which allows monitoring the
material treatment process with 2-mm resolution
in real time, as well as providing automatic
orientation of a sample, adjustment to marking
points and self-focusing onto sample surface.
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Innovative method Intrascribe

• Workstation features Software

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Innovative method Intrascribe
Technology features Type Intravolume
layer-to-layer scribing Starting side Front or
rear Wafer thickness 60-450 mm Wafer size
up to 4 Chip size from 200 mm Positioning
precise 2.5 mm Breaking street width 15-25
mm Throughput per 8-hour shift Wafer thickness
Wafers processed 240-250 mm up to 5 120-240
mm up to 10 60-120 mm up to 16
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Innovative method Intrascribe
Divided chips on stretched supported ribbon
dimensions of a chip are 560x700 mm
Edge quality of dice Width of technological
street is 60 mm
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Innovative method Intrascribe
Technological cutting line
Edge quality
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Innovative method IntrascribePatents
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Collaboration offers

• Technology transfer
• Launching a Joint enterprise
• Manufacturing at Multitech Ltd. production
  facilities
• Sapphire Scribing System production and supply

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MULTITECH Ltd.190103, Russia, Saint-Petersburg,R
izhskiy pr., 26
Alexeev Andrey Mihailovich, Director e-mail
aalexeev_at_mail.admiral.ru info_at_laser-design.com
Phone/Fax [phone] Phone 7(812)
251-03-04 7(812) 251-73-33 http//www.laser-desig
n.com