AP 283 Complement6

1
APh 183 Physics of Semiconductors and
Semiconductor Devices
Tuesday Thursday, 9-1030 am 104 Watson
Instructor H.A. Atwater Complement 1 Gallium
Nitride and III-Nitride Semiconductors
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III-Nitride Semiconductors
3
Evolution of Luminous Efficiency by Technology
4
GaN Bandstructure (Wurtzite Phase)
5
GaN Mobility and Scattering
6
GaN Hydrogen Passivation of Dopants
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GaN Properties
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GaN Field Effect Transistors
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GaN as a Power Device Material
10
GaN Typical Blue LED Structure
11
GaN/Sapphire Growth
12
Dislocation Density Effects on Internal Quantum
Efficiency and Device Lifetime
13
GaN Defect Reduction via Lateral Epitaxial Growth
14
Light Extraction Critically Dependent on Layer
Thickness Control
15
Photonic Crystals Improve Light Emission
Directivity
16
LED Spectral Luminous Efficiency vs. Eye Response
17
White Light Generation via Phosphor
Down-Conversion and RGB Color Mixing
18
CdSe Quantum Dot Phosphors for White LEDs
19
Examples of LED Packaging Schemes
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GaN LED Package
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Device Structure for UV LED
22
Thin Metal Contact Important to UV LEDs
23
LED Applications
Lighting Traffic Signals
Displays
University of Strathclyde Institute of Photonics
24
HBLED Market