SU8 Process Summary1

1
SU-8 Process Summary(1)

• Electrical via formation
• 90 100um thick SU-8 25
• Substrate 2 X 3 glass plate
• Cleaning with TCE/Aceton/Methanol
• Dehydrate for 10-15min at 120C
• Spin - 500(rpm)/100(r/s)/10s, 650/500/30
• Bake 1.5h 2hr at 100C, a hot plate
• Exposure 400mJ with OAI 365nm
• Post bake from 50C to 95C(5min), 95C(25min),
  auto off , take out at 50C
• Nice cool-down
• Develop in PGMEA 3 4min

Glass
Cu conductors
SU-8
100X200um vias
Via molds defined using SU-8
2
SU-8 Process Summary(1)

• Remove unnecessary Potion of SU-8 from the
  substrate
• Nice Cool-down before developing
• After developing
• Rinse with fresh PGMEA
• Dry at 40 50C the hot plate
• RIE 200mtorr, 200W, CHF3 5sccm, O2 45sccm, for 1
  2min