Instrumentation for High Energy Particle and Nuclear Physics

1
Instrumentation for High Energy Particle and
Nuclear Physics

• Four independent subprojects with the following
  structure
• RD for future silicon systems UoO centrally
  Ole Dorholt post.docs (Ole Rohne 50 from
  1.1.2007 one more), MiNilab Bengt Svensson
  collaborators, UoB Kjetil Ullaland post.docs.
  Covers
• 3D sensors - A key collaborator is SINTEF for
  processing of 3D sensors
• Electronics related to such sensors
• Will meet with Thor Erik Hansen from SINTEF at
  CERN Monday about 3D prototype. Meeting 27.11 in
  Oslo to define next steps.
• Techncial student programme at CERN Jens Vigen
  and Nils Hoimyr. Around 10-12 students spend on
  the average 12 months working in various research
  groups. From NTNU, HIST, HIG soon, HiB, HiM etc
• ILO/TTO Steinar Stapnes executes the contracts
  in close co-operation with the Norwegian Research
  Council. Ole Petter Nordahl is currently hired to
  do this. Work on contracts, technology transfers,
  recruitement, and a general Norwegian CERN WEB
  portal.
• CLIC Steinar Stapnes supervises Erik Adli. Erik
  is well underway (and will teach accelerator
  physics in FYS4550 next week)
• In addition, for the International Research Team
  (Forskerskole) Dieter Roehrich and Bernhard
  Skaali act as main contacts at UoB and UoO,
  respectively. See link to last workshop from
  http//www.fys.uio.no/forskning/drgrad/forskerskol
  er/irtg/
• We should send all interested Master Students to
  these workshops

2
Schematics of 3D- and ordinary detector structures

• Proposed by S.I. Parker, C.J. Kenney and J.
  Segal (NIM A 395 (1997) 328)
• Called 3-D because, in contrast to silicon
  planar technology, have three dimensional (3-D)
  electrodes penetrating the silicon substrate
• SINTEF/UiO are currently processing 3D
  structures for a group consisting investigation
  by a collaboration within Brunel Univ., Hawaii
  Univ., Stanford Univ. and CERN

 
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depletion thickness depends on p and n
electrode distance, not on the substrate
thickness ? (1) can operate at very low voltages,
(2) can have a high doping for ultra-high
radiation hardness, (3) are fast and (4) can be
active almost to the edge