Chap'2 Basic Device Physics

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• Chap.2 Basic Device Physics
• Semiconductors Si
• PN Junctions basic I-V minority carriers in
  Base (narrow vs. wide) E Band
• Quasi-Fermi Level (Efp, Efn) Capacitance
  (depletion vs. diffusion)
• MOS Capacitor E band diagram inversion
  Capacitance vs. V
• Gated Diode basics equilibrium vs.
  nonequilibrium band diagrams
• Charges in MOS oxide charge interface states
  Capacitance
• High Field Effects impact ionization B-to-B
  tunneling Tunneling thru Oxide Hot Carrier
  Injection Dielectric breakdown Traps,
  Interface states, and tunneling (Fowler-Nordheim
  Tunneling)

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• 2.1 Semiconductor applets
• Band structure applet 2.3
• Fermi distribution applet 3.1
• ni(T) applet 3.4
• n-type or p-type doping and EF applet 3.2
• Degenerately doped applet 3.4
• Carrier transport (drift-diffusion) applet 2.1
• Diffusion current applet 2.1
• 2.2 PN Junction applets
• Device fabrication applet 7.1
• equilibrium PN - band diagram vs. doping levels
  applet 4.1
• Equilibrium PN space charge, band, carrier in
  band applet 4.3
• Equilibrium PN charge and field applet 4.2
• PIN junction energy band diagram applet 4.4
• PIN junction space charge, E-field applet 4.5

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Doped Si Boron (p-type), P (n-type)
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