Metrology Roadmap 2000 Update

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Metrology Roadmap2000 Update

• Europe Alec Reader (Philips)
• Wilfried Vandervorst (IMEC)
• Rudolf Laubmeier (Infineon)
• Japan Fumio Mizuno (Hitachi)
• Korea
• Taiwan Henry Ma (EPISIL)
• US Bob Scace (NIST)
• Alain Diebold (Int. SEMATECH)

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AGENDA

• 1999 ITRS
• 2000 Review (Why RED?)
• Requirements Tables for 2000 2001

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1999 Metrology Roadmap Highlights
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Why are CD Measurement Requirements RED?

• There is no universal metrology solution for all
  CD measurements.
• e.g., Scatterometry meets Focus-Exposure
  precision needs to (70 nm node?) for resist lines
  but not for contacts (yet).
• 3D info needed for undercut gate, contact, and
  other structures.
• Precision includes tool matching and near long
  term measurement variation.

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CD-SEM a Potential Solution for Wafer and Mask
/ RD Production

• Barriers and Solutions
• 193 157 nm Resist Damage
• lower dose images
• Precision Improvements
• new nano-tip source
• Depth of Focus
• new SEM concept needed
• Ultimate Limit of CD-SEM
• 5 nm for etched poly Si Gate

From Sato and Mizuno, EIPBN 2000, Palm Springs, CA
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High Voltage 200 keV is limited to 1 nm
resolution for SE imaging
Many Thanks to David Joy
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Ultimate limit of CD-SEM
The limit of CD -SEM is based on Secondary
Electron resolution is z the range of
secondary electrons in the material
Many Thanks to David Joy
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CD Potential Solutions for Mask and Wafer
60
nm
node
130 / 90
nm
node


40
nm
node
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CD Potential Solutions for Mask and Wafer
60
nm
node
130 / 90
nm
node


40
nm
node
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Materials Characterization Enables Process and
Metrology Development
Oxynitride and High k Interfaces
NRA Total N in oxynitride
Dave Muller - Lucent
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Gate Dielectric Metrology Potential
Solutions Enable High k Development with Existing
Tool
IR or UV for In-Line ?
Desorber New Software w/optical model High k
and Interface
Existing in-line metrology
Next Generation Tool
60
nm
node
130 / 90
nm
node


40
nm
node
Reason for Red is Precision and Tool Matching
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Interconnect Metrology SolutionsBarrier/Seed Cu
Films
Acoustic ISTS Picosecond acoustics X-ray
reflectivity X-ray fluorescence Non-contact
resistivity
5 Potential Solutions all expected to meet
precision requirements some are extendable to
patterned wafers
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Metrology New Structures
Vertical Transistor CD is a Film Thickness
Courtesy Rafi Kleiman Lucent
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2000 and 2001 Changes

• Accelerated Timeline Brings RED closer..
• Developments in some CD measurements push Red out
  further for some applications?

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Metrology Challenges by 2000 ITRS NodeTiming
Brings RED Closer